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Article: Study of laser-debonded GaN LEDs

TitleStudy of laser-debonded GaN LEDs
Authors
KeywordsGallium nitride
Hexagonal pyramid
Laser debonding
Light emitting diodes
Low-frequency noise
Roughening
Issue Date2006
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 2006, v. 53 n. 9, p. 2266-2271 How to Cite?
AbstractDetailed investigations of laser-debonded GaN-based light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates were reported. The debonded surface was roughened by photoelectrochemical (PEC) etching in a mixture of potassium hydroxide (KOH) and peroxydisulfate (K 2S 2O 8) solution. The power for the laser-assisted debonding process has been systematically optimized. The data show that as long as the laser power does not exceed the optimal value, there is no degradation in the current-voltage (I-V) characteristics, the brightness, as well as the low-frequency noise properties of the devices. The roughness of the debonded surface is systematically varied using different etching times. Experimental results demonstrate strong dependencies of the luminous intensity of the device on the roughness of the debonded surface. A 60% improvement in the luminous intensity of the debonded and roughened LED compared to the original on-sapphire device was observed. This increase in the extraction efficiency is attributed to the reduction in the total internal reflection at the roughened GaN/air interface. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/45279
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChan, CPen_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorYue, TMen_HK
dc.contributor.authorSurya, Cen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLiu, PCKen_HK
dc.contributor.authorLi, Men_HK
dc.date.accessioned2007-10-30T06:21:36Z-
dc.date.available2007-10-30T06:21:36Z-
dc.date.issued2006en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 2006, v. 53 n. 9, p. 2266-2271en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45279-
dc.description.abstractDetailed investigations of laser-debonded GaN-based light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates were reported. The debonded surface was roughened by photoelectrochemical (PEC) etching in a mixture of potassium hydroxide (KOH) and peroxydisulfate (K 2S 2O 8) solution. The power for the laser-assisted debonding process has been systematically optimized. The data show that as long as the laser power does not exceed the optimal value, there is no degradation in the current-voltage (I-V) characteristics, the brightness, as well as the low-frequency noise properties of the devices. The roughness of the debonded surface is systematically varied using different etching times. Experimental results demonstrate strong dependencies of the luminous intensity of the device on the roughness of the debonded surface. A 60% improvement in the luminous intensity of the debonded and roughened LED compared to the original on-sapphire device was observed. This increase in the extraction efficiency is attributed to the reduction in the total internal reflection at the roughened GaN/air interface. © 2006 IEEE.en_HK
dc.format.extent411339 bytes-
dc.format.extent3553 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.subjectGallium nitrideen_HK
dc.subjectHexagonal pyramiden_HK
dc.subjectLaser debondingen_HK
dc.subjectLight emitting diodesen_HK
dc.subjectLow-frequency noiseen_HK
dc.subjectRougheningen_HK
dc.titleStudy of laser-debonded GaN LEDsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=53&issue=9&spage=2266&epage=2272&date=2006&atitle=Study+of+Laser-Debonded+GaN+LEDsen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/TED.2006.881008en_HK
dc.identifier.scopuseid_2-s2.0-33947188538en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33947188538&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume53en_HK
dc.identifier.issue9en_HK
dc.identifier.spage2266en_HK
dc.identifier.epage2271en_HK
dc.identifier.isiWOS:000240076500035-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChan, CP=7404814427en_HK
dc.identifier.scopusauthoridGao, J=34770762800en_HK
dc.identifier.scopusauthoridYue, TM=7101867231en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLiu, PCK=53873054700en_HK
dc.identifier.scopusauthoridLi, M=26643642600en_HK

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