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Article: Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam

TitleMemory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam
Authors
KeywordsLow energy ion beam
Memory effect
Silicon nanocrystal (nc-Si)
Issue Date2006
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 2006, v. 27 n. 4, p. 231-233 How to Cite?
AbstractDensely stacked silicon nanocrystal layers embedded in the gate oxide of MOSFETs are synthesized with Si ion implantation into an SiO2 layer at an implantation energy of 2 keV. In this letter, the memory characteristics of MOSFETs with 7-nm tunnel oxide and 20-nm control oxide at various temperatures have been investigated. A threshold voltage window of ∼ 0.5 V is achieved under write/erase (W/E) voltages of +12 V/-12 V for 1 ms. The devices exhibit good endurance up to 105 W/E cycles even at a high operation temperature of 150 °C. They also have good retention characteristics with an extrapolated ten-year memory window of ∼ 0.3 V at 100 °C. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/45278
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorNg, CYen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-10-30T06:21:35Z-
dc.date.available2007-10-30T06:21:35Z-
dc.date.issued2006en_HK
dc.identifier.citationIeee Electron Device Letters, 2006, v. 27 n. 4, p. 231-233en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45278-
dc.description.abstractDensely stacked silicon nanocrystal layers embedded in the gate oxide of MOSFETs are synthesized with Si ion implantation into an SiO2 layer at an implantation energy of 2 keV. In this letter, the memory characteristics of MOSFETs with 7-nm tunnel oxide and 20-nm control oxide at various temperatures have been investigated. A threshold voltage window of ∼ 0.5 V is achieved under write/erase (W/E) voltages of +12 V/-12 V for 1 ms. The devices exhibit good endurance up to 105 W/E cycles even at a high operation temperature of 150 °C. They also have good retention characteristics with an extrapolated ten-year memory window of ∼ 0.3 V at 100 °C. © 2006 IEEE.en_HK
dc.format.extent261092 bytes-
dc.format.extent13983 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rights©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectLow energy ion beamen_HK
dc.subjectMemory effecten_HK
dc.subjectSilicon nanocrystal (nc-Si)en_HK
dc.titleMemory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beamen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=27&issue=4&spage=231&epage=233&date=2006&atitle=Memory+characteristics+of+MOSFETs+with+densely+stacked+silicon+nanocrystal+Layers+in+the+gate+oxide+synthesized+by+low-energy+ion+beamen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/LED.2006.871183en_HK
dc.identifier.scopuseid_2-s2.0-33645635420en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645635420&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume27en_HK
dc.identifier.issue4en_HK
dc.identifier.spage231en_HK
dc.identifier.epage233en_HK
dc.identifier.isiWOS:000236519400009-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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