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Article: Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO 2 thin films

TitleDielectric functions of densely stacked Si nanocrystal layer embedded in SiO 2 thin films
Authors
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 25 How to Cite?
AbstractA densely stacked silicon nanocrystal layer embedded in a Si O2 thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45266
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDing, Len_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorWong, JIen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorTung, CHen_HK
dc.contributor.authorTrigg, ADen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-10-30T06:21:20Z-
dc.date.available2007-10-30T06:21:20Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 25en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45266-
dc.description.abstractA densely stacked silicon nanocrystal layer embedded in a Si O2 thin film is synthesized with Si ion implantation. The dielectric functions of the nanocrystal layer are determined with spectroscopic ellipsometry. The dielectric functions show a significant suppression as compared to that of bulk crystalline Si. Thermal annealing leads to an evolution of the dielectric functions from the amorphous towards crystalline state. For an insufficient annealing, the dielectric functions present a single broad peak, being similar to that of amorphous Si. However, a sufficient annealing leads to the emergence of the two-peak structure which is similar to that of bulk crystalline Si. In addition, the dielectric functions increase with annealing with a trend towards bulk Si. © 2006 American Institute of Physics.en_HK
dc.format.extent373010 bytes-
dc.format.extent13983 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleDielectric functions of densely stacked Si nanocrystal layer embedded in SiO 2 thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=89&issue=25&spage=251910:1&epage=3&date=2006&atitle=Dielectric+functions+of+densely+stacked+Si+nanocrystal+layer+embedded+in+SiO2+thin+filmsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2410227en_HK
dc.identifier.scopuseid_2-s2.0-33845929197en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33845929197&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue25en_HK
dc.identifier.isiWOS:000243415200034-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridWong, JI=15123438200en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridLiu, YC=36062391300en_HK
dc.identifier.scopusauthoridTung, CH=7201776867en_HK
dc.identifier.scopusauthoridTrigg, AD=8835395900en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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