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Article: Investigations on electroresistance effect in epitaxial manganite films using field effect configurations

TitleInvestigations on electroresistance effect in epitaxial manganite films using field effect configurations
Authors
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 13, p. 132502:1-3 How to Cite?
AbstractThe influence of static electric field on the transport properties in La0.7A0.3MnO3 (A=Ca,Ba) epitaxial thin films was investigated by using field effect configurations (FEC). A single layer manganite film was deposited on LaAlO3 (LAO) substrate by pulsed laser deposition technique, and then a simple FEC was formed on it using the lithography technique, in which the manganite film was used as a channel, and the LAO substrate as a gate. Surprising results were achieved by employing such a FEC. The transport resistance increases with a positive gate voltage but decreases with a negative bias, which means the electroresistance (ER) effect changes sign with the field direction. The observed reduction of resistivity for the La0.7Ca0.3MnO3 and La0.7Ba0.3MnO3 channels reaches ~32% and ~34% upon a bias of –80 and –300 V, respectively. The films could completely return to their pristine state after the bias was removed and the ER effect could be fully reproduced.
Persistent Identifierhttp://hdl.handle.net/10722/45264
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHu, FXen_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2007-10-30T06:21:17Z-
dc.date.available2007-10-30T06:21:17Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 13, p. 132502:1-3en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45264-
dc.description.abstractThe influence of static electric field on the transport properties in La0.7A0.3MnO3 (A=Ca,Ba) epitaxial thin films was investigated by using field effect configurations (FEC). A single layer manganite film was deposited on LaAlO3 (LAO) substrate by pulsed laser deposition technique, and then a simple FEC was formed on it using the lithography technique, in which the manganite film was used as a channel, and the LAO substrate as a gate. Surprising results were achieved by employing such a FEC. The transport resistance increases with a positive gate voltage but decreases with a negative bias, which means the electroresistance (ER) effect changes sign with the field direction. The observed reduction of resistivity for the La0.7Ca0.3MnO3 and La0.7Ba0.3MnO3 channels reaches ~32% and ~34% upon a bias of –80 and –300 V, respectively. The films could completely return to their pristine state after the bias was removed and the ER effect could be fully reproduced.en_HK
dc.format.extent68767 bytes-
dc.format.extent4892 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleInvestigations on electroresistance effect in epitaxial manganite films using field effect configurationsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=88&issue=13&spage=132502:1&epage=3&date=2006&atitle=Investigations+on+electroresistance+effect+in+epitaxial+manganite+films+using+field+effect+configurationsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2189197en_HK
dc.identifier.scopuseid_2-s2.0-33645514985-
dc.identifier.isiWOS:000236465100046-

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