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Article: Direct observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaNGaN quantum well structures

TitleDirect observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaNGaN quantum well structures
Authors
KeywordsPhysics Engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 86 n. 7, article no. 071905, p. 1-3 How to Cite?
AbstractStrongly enhanced lateral diffusion of photogenerated carriers was directly observed in the luminescent image of the InGaNGaN quantum wells. Such an effect was quantitatively modeled using diffusion equation and the ambipolar diffusion coefficient derived by K. H. Gulden and his co-workers [Phys. Rev. Lett. 66, 373 (1991)]. Our simulation shows that the vertical piezoelectric field existing in strained InGaNGaN quantum wells is the original "driving force" for the enhancement of lateral diffusion. Influence of the density of photogenerated carriers and their average mobility on the enhancement was discussed. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45259
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorWang, YJen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorZhang, XHen_HK
dc.contributor.authorLiu, Wen_HK
dc.contributor.authorChua, SJen_HK
dc.date.accessioned2007-10-30T06:21:12Z-
dc.date.available2007-10-30T06:21:12Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 86 n. 7, article no. 071905, p. 1-3-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45259-
dc.description.abstractStrongly enhanced lateral diffusion of photogenerated carriers was directly observed in the luminescent image of the InGaNGaN quantum wells. Such an effect was quantitatively modeled using diffusion equation and the ambipolar diffusion coefficient derived by K. H. Gulden and his co-workers [Phys. Rev. Lett. 66, 373 (1991)]. Our simulation shows that the vertical piezoelectric field existing in strained InGaNGaN quantum wells is the original "driving force" for the enhancement of lateral diffusion. Influence of the density of photogenerated carriers and their average mobility on the enhancement was discussed. © 2005 American Institute of Physics.en_HK
dc.format.extent141659 bytes-
dc.format.extent6153 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 86 n. 7, article no. 071905, p. 1-3 and may be found at https://doi.org/10.1063/1.1862774-
dc.subjectPhysics Engineeringen_HK
dc.titleDirect observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaNGaN quantum well structuresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=86&issue=7&spage=071905:1&epage=3&date=2005&atitle=Direct+observation+and+theoretical+interpretation+of+strongly+enhanced+lateral+diffusion+of+photogenerated+carriers+in+InGaN/GaN+quantum+well+structuresen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1862774en_HK
dc.identifier.scopuseid_2-s2.0-17044377155en_HK
dc.identifier.hkuros97373-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-17044377155&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue7en_HK
dc.identifier.spagearticle no. 071905, p. 1-
dc.identifier.epagearticle no. 071905, p. 3-
dc.identifier.isiWOS:000227439400029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridWang, YJ=8296286800en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridZhang, XH=8543612300en_HK
dc.identifier.scopusauthoridLiu, W=36080164600en_HK
dc.identifier.scopusauthoridChua, SJ=35516064500en_HK

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