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Article: Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

TitleMemory effect of Al-rich AlN films synthesized with rf magnetron sputtering
Authors
KeywordsPhysics Engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 87 n. 3 How to Cite?
AbstractAl-rich AlN thin film, which is deposited onto n -type Si substrate by radio frequency sputtering of Al target in an argon and N2 gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60 nm Al-rich AlN thin film, a voltage of -15 V applied to the metal electrode for 10-6 s causes a flatband voltage shift of ∼1.5 V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlN thin films provide the possibility of memory applications with low cost. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45258
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorZhao, Pen_HK
dc.contributor.authorZhang, Sen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorFu, YQen_HK
dc.date.accessioned2007-10-30T06:21:11Z-
dc.date.available2007-10-30T06:21:11Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 87 n. 3en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45258-
dc.description.abstractAl-rich AlN thin film, which is deposited onto n -type Si substrate by radio frequency sputtering of Al target in an argon and N2 gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60 nm Al-rich AlN thin film, a voltage of -15 V applied to the metal electrode for 10-6 s causes a flatband voltage shift of ∼1.5 V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlN thin films provide the possibility of memory applications with low cost. © 2005 American Institute of Physics.en_HK
dc.format.extent187625 bytes-
dc.format.extent13983 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleMemory effect of Al-rich AlN films synthesized with rf magnetron sputteringen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=3&spage=033112:1&epage=3&date=2005&atitle=Memory+effect+of+Al-rich+AlN+films+synthesized+with+rf+magnetron+sputteringen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2000337en_HK
dc.identifier.scopuseid_2-s2.0-24144492140en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-24144492140&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume87en_HK
dc.identifier.issue3en_HK
dc.identifier.isiWOS:000230596000058-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridZhao, P=8521897200en_HK
dc.identifier.scopusauthoridZhang, S=7409376020en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridFu, YQ=7404433406en_HK

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