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Article: Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering
Title | Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering |
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Authors | |
Keywords | Physics Engineering |
Issue Date | 2005 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2005, v. 87 n. 3, article no. 033112 How to Cite? |
Abstract | Al-rich AlN thin film, which is deposited onto n -type Si substrate by radio frequency sputtering of Al target in an argon and N2 gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60 nm Al-rich AlN thin film, a voltage of -15 V applied to the metal electrode for 10-6 s causes a flatband voltage shift of ∼1.5 V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlN thin films provide the possibility of memory applications with low cost. © 2005 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/45258 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Liu, Y | en_HK |
dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Zhao, P | en_HK |
dc.contributor.author | Zhang, S | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Fu, YQ | en_HK |
dc.date.accessioned | 2007-10-30T06:21:11Z | - |
dc.date.available | 2007-10-30T06:21:11Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2005, v. 87 n. 3, article no. 033112 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/45258 | - |
dc.description.abstract | Al-rich AlN thin film, which is deposited onto n -type Si substrate by radio frequency sputtering of Al target in an argon and N2 gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60 nm Al-rich AlN thin film, a voltage of -15 V applied to the metal electrode for 10-6 s causes a flatband voltage shift of ∼1.5 V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlN thin films provide the possibility of memory applications with low cost. © 2005 American Institute of Physics. | en_HK |
dc.format.extent | 187625 bytes | - |
dc.format.extent | 13983 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/pdf | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.rights | Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 87 n. 3, article no. 033112 and may be found at https://doi.org/10.1063/1.2000337 | - |
dc.subject | Physics Engineering | en_HK |
dc.title | Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=3&spage=033112:1&epage=3&date=2005&atitle=Memory+effect+of+Al-rich+AlN+films+synthesized+with+rf+magnetron+sputtering | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.2000337 | en_HK |
dc.identifier.scopus | eid_2-s2.0-24144492140 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-24144492140&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 87 | en_HK |
dc.identifier.issue | 3 | en_HK |
dc.identifier.spage | article no. 033112 | - |
dc.identifier.epage | article no. 033112 | - |
dc.identifier.isi | WOS:000230596000058 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Liu, Y=36064444100 | en_HK |
dc.identifier.scopusauthorid | Chen, TP=7405540443 | en_HK |
dc.identifier.scopusauthorid | Zhao, P=8521897200 | en_HK |
dc.identifier.scopusauthorid | Zhang, S=7409376020 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Fu, YQ=7404433406 | en_HK |
dc.identifier.issnl | 0003-6951 | - |