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Article: Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

TitleMicro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers
Authors
Wang, RXXu, SJFung, SBeling, CDWang, KLi, SWei, ZFZhou, TJZhang, JDHuang, YGong, M
KeywordsPhysics Engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 87 n. 3, article no. 031906 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1999011
AbstractGaN epilayers grown on sapphire substrate were irradiated with various dosages of neutrons and were characterized using Micro-Raman and photoluminescence. It was found that the A1 (LO) peak in the Raman spectra clearly shifted with neutron irradiation dosage. Careful curve fitting of the Raman data was carried out to obtain the carrier concentration which was found to vary with the neutron irradiation dosage. The variation of the full width at half maximum height of the photoluminescence was consistent with the Raman results. The neutron irradiation-induced structural defects (likely to be GeGa) give rise to carrier trap centers which are responsible for the observed reduction in carrier concentration of the irradiated GaN. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45256
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000230596000018
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorWang, Ken_HK
dc.contributor.authorLi, Sen_HK
dc.contributor.authorWei, ZFen_HK
dc.contributor.authorZhou, TJen_HK
dc.contributor.authorZhang, JDen_HK
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2007-10-30T06:21:08Z-
dc.date.available2007-10-30T06:21:08Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 87 n. 3, article no. 031906-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45256-
dc.description.abstractGaN epilayers grown on sapphire substrate were irradiated with various dosages of neutrons and were characterized using Micro-Raman and photoluminescence. It was found that the A1 (LO) peak in the Raman spectra clearly shifted with neutron irradiation dosage. Careful curve fitting of the Raman data was carried out to obtain the carrier concentration which was found to vary with the neutron irradiation dosage. The variation of the full width at half maximum height of the photoluminescence was consistent with the Raman results. The neutron irradiation-induced structural defects (likely to be GeGa) give rise to carrier trap centers which are responsible for the observed reduction in carrier concentration of the irradiated GaN. © 2005 American Institute of Physics.en_HK
dc.format.extent132887 bytes-
dc.format.extent13983 bytes-
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dc.format.extent6153 bytes-
dc.format.mimetypeapplication/pdf-
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dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 87 n. 3, article no. 031906 and may be found at https://doi.org/10.1063/1.1999011-
dc.subjectPhysics Engineeringen_HK
dc.titleMicro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayersen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=3&spage=031906:1&epage=3&date=2005&atitle=Micro-Raman+and+photoluminescence+studies+of+neutron-irradiated+gallium+nitride+epilayersen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1999011en_HK
dc.identifier.scopuseid_2-s2.0-24144476290en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-24144476290&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume87en_HK
dc.identifier.issue3en_HK
dc.identifier.spagearticle no. 031906-
dc.identifier.epagearticle no. 031906-
dc.identifier.isiWOS:000230596000018-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, RX=7405339075en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridWang, K=7501396674en_HK
dc.identifier.scopusauthoridLi, S=7409241368en_HK
dc.identifier.scopusauthoridWei, ZF=7402259042en_HK
dc.identifier.scopusauthoridZhou, TJ=8707410400en_HK
dc.identifier.scopusauthoridZhang, JD=8555988600en_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.issnl0003-6951-

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