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Article: Current-induced asymmetric transport in la0.8ca0.2mno3 epitaxial thin films
Title | Current-induced asymmetric transport in la0.8ca0.2mno3 epitaxial thin films |
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Authors | |
Keywords | Physics Engineering |
Issue Date | 2005 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2005, v. 87 n. 15, article no. 152504, p. 1-3 How to Cite? |
Abstract | We investigated the influence of a dc current on the transport properties in La0.8Ca0.2MnO3 epitaxial thin films grown on SrTiO3 substrates. A prominent finding is the appearance of asymmetric transport properties, like the behavior of p-n junctions, in a wide temperature range from 10 K to 300 K after the films were applied by a dc current over a threshold value. The asymmetric behavior resulted from a relative weak excitation is unstable and even spontaneously disappears. By optimizing excitation condition, the rectifyinglike behavior turns to be more significant and stable. Applying a small ac current could make the asymmetric transport collapse, subsequently, conventional symmetric transport behaviors appear. Phase separation and the coexistent ferromagnetic phases with different orbital order are taken into account in the interpretation of the observed phenomena. |
Persistent Identifier | http://hdl.handle.net/10722/45255 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Hu, FX | en_HK |
dc.contributor.author | Gao, J | en_HK |
dc.date.accessioned | 2007-10-30T06:21:07Z | - |
dc.date.available | 2007-10-30T06:21:07Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2005, v. 87 n. 15, article no. 152504, p. 1-3 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/45255 | - |
dc.description.abstract | We investigated the influence of a dc current on the transport properties in La0.8Ca0.2MnO3 epitaxial thin films grown on SrTiO3 substrates. A prominent finding is the appearance of asymmetric transport properties, like the behavior of p-n junctions, in a wide temperature range from 10 K to 300 K after the films were applied by a dc current over a threshold value. The asymmetric behavior resulted from a relative weak excitation is unstable and even spontaneously disappears. By optimizing excitation condition, the rectifyinglike behavior turns to be more significant and stable. Applying a small ac current could make the asymmetric transport collapse, subsequently, conventional symmetric transport behaviors appear. Phase separation and the coexistent ferromagnetic phases with different orbital order are taken into account in the interpretation of the observed phenomena. | en_HK |
dc.format.extent | 76331 bytes | - |
dc.format.extent | 4892 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | - |
dc.rights | Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 87 n. 15, article no. 152504, p. 1-3 and may be found at https://doi.org/10.1063/1.2093934 | - |
dc.subject | Physics Engineering | en_HK |
dc.title | Current-induced asymmetric transport in la0.8ca0.2mno3 epitaxial thin films | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=15&spage=152504:1&epage=3&date=2005&atitle=Current-induced+asymmetric+transport+in+la0.8ca0.2mno3+epitaxial+thin+films | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.2093934 | en_HK |
dc.identifier.scopus | eid_2-s2.0-28344440007 | - |
dc.identifier.hkuros | 109291 | - |
dc.identifier.volume | 87 | - |
dc.identifier.issue | 15 | - |
dc.identifier.spage | article no. 152504, p. 1 | - |
dc.identifier.epage | article no. 152504, p. 3 | - |
dc.identifier.isi | WOS:000232442200046 | - |
dc.identifier.issnl | 0003-6951 | - |