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Article: Current-induced asymmetric transport in la0.8ca0.2mno3 epitaxial thin films

TitleCurrent-induced asymmetric transport in la0.8ca0.2mno3 epitaxial thin films
Authors
KeywordsPhysics Engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 87 n. 15, article no. 152504, p. 1-3 How to Cite?
AbstractWe investigated the influence of a dc current on the transport properties in La0.8Ca0.2MnO3 epitaxial thin films grown on SrTiO3 substrates. A prominent finding is the appearance of asymmetric transport properties, like the behavior of p-n junctions, in a wide temperature range from 10 K to 300 K after the films were applied by a dc current over a threshold value. The asymmetric behavior resulted from a relative weak excitation is unstable and even spontaneously disappears. By optimizing excitation condition, the rectifyinglike behavior turns to be more significant and stable. Applying a small ac current could make the asymmetric transport collapse, subsequently, conventional symmetric transport behaviors appear. Phase separation and the coexistent ferromagnetic phases with different orbital order are taken into account in the interpretation of the observed phenomena.
Persistent Identifierhttp://hdl.handle.net/10722/45255
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHu, FXen_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2007-10-30T06:21:07Z-
dc.date.available2007-10-30T06:21:07Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 87 n. 15, article no. 152504, p. 1-3-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45255-
dc.description.abstractWe investigated the influence of a dc current on the transport properties in La0.8Ca0.2MnO3 epitaxial thin films grown on SrTiO3 substrates. A prominent finding is the appearance of asymmetric transport properties, like the behavior of p-n junctions, in a wide temperature range from 10 K to 300 K after the films were applied by a dc current over a threshold value. The asymmetric behavior resulted from a relative weak excitation is unstable and even spontaneously disappears. By optimizing excitation condition, the rectifyinglike behavior turns to be more significant and stable. Applying a small ac current could make the asymmetric transport collapse, subsequently, conventional symmetric transport behaviors appear. Phase separation and the coexistent ferromagnetic phases with different orbital order are taken into account in the interpretation of the observed phenomena.en_HK
dc.format.extent76331 bytes-
dc.format.extent4892 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 87 n. 15, article no. 152504, p. 1-3 and may be found at https://doi.org/10.1063/1.2093934-
dc.subjectPhysics Engineeringen_HK
dc.titleCurrent-induced asymmetric transport in la0.8ca0.2mno3 epitaxial thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=15&spage=152504:1&epage=3&date=2005&atitle=Current-induced+asymmetric+transport+in+la0.8ca0.2mno3+epitaxial+thin+filmsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2093934en_HK
dc.identifier.scopuseid_2-s2.0-28344440007-
dc.identifier.hkuros109291-
dc.identifier.volume87-
dc.identifier.issue15-
dc.identifier.spagearticle no. 152504, p. 1-
dc.identifier.epagearticle no. 152504, p. 3-
dc.identifier.isiWOS:000232442200046-
dc.identifier.issnl0003-6951-

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