File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Static dielectric constant of isolated silicon nanocrystals embedded in a SiO 2 thin film

TitleStatic dielectric constant of isolated silicon nanocrystals embedded in a SiO 2 thin film
Authors
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 6 How to Cite?
AbstractThe static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a Si O2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell-Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼4.5 nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si -based memory devices. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45254
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorNg, CYen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorDong, ZLen_HK
dc.date.accessioned2007-10-30T06:21:06Z-
dc.date.available2007-10-30T06:21:06Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 6en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45254-
dc.description.abstractThe static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a Si O2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell-Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼4.5 nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si -based memory devices. © 2006 American Institute of Physics.en_HK
dc.format.extent135697 bytes-
dc.format.extent13983 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleStatic dielectric constant of isolated silicon nanocrystals embedded in a SiO 2 thin filmen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=88&issue=6&spage=063103:1&epage=3&date=2006&atitle=Static+dielectric+constant+of+isolated+silicon+nanocrystals+embedded+in+a+SIO2+thin+filmen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2172009en_HK
dc.identifier.scopuseid_2-s2.0-32444451788en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-32444451788&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume88en_HK
dc.identifier.issue6en_HK
dc.identifier.isiWOS:000235252800087-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridDong, ZL=17345797900en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats