File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Response to "comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts [ Appl. Phys. Lett. 90, 046101 (2007)]"

TitleResponse to "comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts [ Appl. Phys. Lett. 90, 046101 (2007)]"
Authors
KeywordsPhysics Engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 90 n. 4 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/45253
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorCheung, CKen_HK
dc.date.accessioned2007-10-30T06:21:05Z-
dc.date.available2007-10-30T06:21:05Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 4en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45253-
dc.format.extent45191 bytes-
dc.format.extent5932 bytes-
dc.format.extent6153 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleResponse to "comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts [ Appl. Phys. Lett. 90, 046101 (2007)]"en_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=90&issue=4&spage=046102&epage=&date=2007&atitle=Response+to+%27Comment+on+Influence+of+indium+tin+oxide+thin-film+quality+on+reverse+leakage+current+of+indium+tin+oxide/n-GaN+Schottky+contacts+[Appl.+Phys.+Lett.+90,+046101+(2007)]%27en_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2435356en_HK
dc.identifier.scopuseid_2-s2.0-33846623829en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846623829&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue4en_HK
dc.identifier.isiWOS:000243789600128-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, RX=14038407200en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridCheung, CK=10044144900en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats