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Article: Response to "comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts [ Appl. Phys. Lett. 90, 046101 (2007)]"

TitleResponse to "comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts [ Appl. Phys. Lett. 90, 046101 (2007)]"
Authors
KeywordsPhysics Engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 90 n. 4, article no. 046102 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/45253
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorCheung, CKen_HK
dc.date.accessioned2007-10-30T06:21:05Z-
dc.date.available2007-10-30T06:21:05Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 4, article no. 046102-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45253-
dc.format.extent45191 bytes-
dc.format.extent5932 bytes-
dc.format.extent6153 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 90 n. 4, article no. 046102 and may be found at https://doi.org/10.1063/1.2435356-
dc.subjectPhysics Engineeringen_HK
dc.titleResponse to "comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/ n-GaN Schottky contacts [ Appl. Phys. Lett. 90, 046101 (2007)]"en_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=90&issue=4&spage=046102&epage=&date=2007&atitle=Response+to+%27Comment+on+Influence+of+indium+tin+oxide+thin-film+quality+on+reverse+leakage+current+of+indium+tin+oxide/n-GaN+Schottky+contacts+[Appl.+Phys.+Lett.+90,+046101+(2007)]%27en_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2435356en_HK
dc.identifier.scopuseid_2-s2.0-33846623829en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846623829&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue4en_HK
dc.identifier.spagearticle no. 046102-
dc.identifier.epagearticle no. 046102-
dc.identifier.isiWOS:000243789600128-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, RX=14038407200en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridCheung, CK=10044144900en_HK

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