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Article: Growth mechanism of stacked-cone and smooth-surface GaN nanowires
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TitleGrowth mechanism of stacked-cone and smooth-surface GaN nanowires
 
AuthorsCai, XM1
Djurišić, AB1
Xie, MH1
Chiu, CS2
Gwo, S2
 
KeywordsPhysics Engineering
 
Issue Date2005
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 2005, v. 87 n. 18, p. 1-3 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2126118
 
AbstractGallium nitride (GaN) nanowires were grown on uncoated or Ni-coated Si substrates by evaporation of Ga in NH3 Ar gas flow. A mixture of nanowires growing along [10 1- 0] and [0001] was obtained, where the former showed smooth surfaces and the latter showed the stacked-cone morphology. The yield of the two types of nanowires was found to depend on the NH3 flow. The reduction of NH3 flow led to fewer stacked-cone nanowires. The growth mechanisms of the two types of GaN nanowires are discussed. © 2005 American Institute of Physics.
 
ISSN0003-6951
2012 Impact Factor: 3.794
2012 SCImago Journal Rankings: 1.938
 
DOIhttp://dx.doi.org/10.1063/1.2126118
 
ISI Accession Number IDWOS:000232886400066
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorCai, XM
 
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorXie, MH
 
dc.contributor.authorChiu, CS
 
dc.contributor.authorGwo, S
 
dc.date.accessioned2007-10-30T06:21:03Z
 
dc.date.available2007-10-30T06:21:03Z
 
dc.date.issued2005
 
dc.description.abstractGallium nitride (GaN) nanowires were grown on uncoated or Ni-coated Si substrates by evaporation of Ga in NH3 Ar gas flow. A mixture of nanowires growing along [10 1- 0] and [0001] was obtained, where the former showed smooth surfaces and the latter showed the stacked-cone morphology. The yield of the two types of nanowires was found to depend on the NH3 flow. The reduction of NH3 flow led to fewer stacked-cone nanowires. The growth mechanisms of the two types of GaN nanowires are discussed. © 2005 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent249892 bytes
 
dc.format.extent3553 bytes
 
dc.format.extent4804 bytes
 
dc.format.mimetypeapplication/pdf
 
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dc.identifier.citationApplied Physics Letters, 2005, v. 87 n. 18, p. 1-3 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.2126118
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.2126118
 
dc.identifier.epage3
 
dc.identifier.isiWOS:000232886400066
 
dc.identifier.issn0003-6951
2012 Impact Factor: 3.794
2012 SCImago Journal Rankings: 1.938
 
dc.identifier.issue18
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-27344446337
 
dc.identifier.spage1
 
dc.identifier.urihttp://hdl.handle.net/10722/45252
 
dc.identifier.volume87
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics Engineering
 
dc.titleGrowth mechanism of stacked-cone and smooth-surface GaN nanowires
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. National Tsing Hua University