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Article: Growth mechanism of stacked-cone and smooth-surface GaN nanowires

TitleGrowth mechanism of stacked-cone and smooth-surface GaN nanowires
Authors
KeywordsPhysics Engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 87 n. 18, p. 1-3 How to Cite?
AbstractGallium nitride (GaN) nanowires were grown on uncoated or Ni-coated Si substrates by evaporation of Ga in NH3 Ar gas flow. A mixture of nanowires growing along [10 1- 0] and [0001] was obtained, where the former showed smooth surfaces and the latter showed the stacked-cone morphology. The yield of the two types of nanowires was found to depend on the NH3 flow. The reduction of NH3 flow led to fewer stacked-cone nanowires. The growth mechanisms of the two types of GaN nanowires are discussed. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45252
ISSN
2014 Impact Factor: 3.302
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorCai, XMen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorChiu, CSen_HK
dc.contributor.authorGwo, Sen_HK
dc.date.accessioned2007-10-30T06:21:03Z-
dc.date.available2007-10-30T06:21:03Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 87 n. 18, p. 1-3en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45252-
dc.description.abstractGallium nitride (GaN) nanowires were grown on uncoated or Ni-coated Si substrates by evaporation of Ga in NH3 Ar gas flow. A mixture of nanowires growing along [10 1- 0] and [0001] was obtained, where the former showed smooth surfaces and the latter showed the stacked-cone morphology. The yield of the two types of nanowires was found to depend on the NH3 flow. The reduction of NH3 flow led to fewer stacked-cone nanowires. The growth mechanisms of the two types of GaN nanowires are discussed. © 2005 American Institute of Physics.en_HK
dc.format.extent249892 bytes-
dc.format.extent3553 bytes-
dc.format.extent4804 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
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dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleGrowth mechanism of stacked-cone and smooth-surface GaN nanowiresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=18&spage=183103:1&epage=3&date=2005&atitle=Growth+mechanism+of+stacked-cone+and+smooth-surface+GaN+nanowiresen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2126118en_HK
dc.identifier.scopuseid_2-s2.0-27344446337en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-27344446337&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume87en_HK
dc.identifier.issue18en_HK
dc.identifier.spage1en_HK
dc.identifier.epage3en_HK
dc.identifier.isiWOS:000232886400066-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCai, XM=8923610200en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridChiu, CS=25627529900en_HK
dc.identifier.scopusauthoridGwo, S=18835295800en_HK

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