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Article: Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrix

TitleThermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrix
Authors
KeywordsPhysics Engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 87 n. 12, article no. 121903, p. 1-3 How to Cite?
AbstractThe thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a Si O2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45249
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDing, Len_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-10-30T06:20:59Z-
dc.date.available2007-10-30T06:20:59Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 87 n. 12, article no. 121903, p. 1-3-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45249-
dc.description.abstractThe thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a Si O2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also. © 2005 American Institute of Physics.en_HK
dc.format.extent78820 bytes-
dc.format.extent13983 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 87 n. 12, article no. 121903, p. 1-3 and may be found at https://doi.org/10.1063/1.2051807-
dc.subjectPhysics Engineeringen_HK
dc.titleThermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrixen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=12&spage=121903:1&epage=3&date=2005&atitle=Thermal+annealing+effect+on+the+band+gap+and+dielectric+functions+of+silicon+nanocrystals+embedded+in+SIO2+matrixen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2051807en_HK
dc.identifier.scopuseid_2-s2.0-28344438937en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-28344438937&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume87en_HK
dc.identifier.issue12en_HK
dc.identifier.spagearticle no. 121903, p. 1-
dc.identifier.epagearticle no. 121903, p. 3-
dc.identifier.isiWOS:000231907200019-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridLiu, YC=36062391300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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