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Article: Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrix

TitleThermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrix
Authors
KeywordsPhysics Engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 87 n. 12, p. 1-3 How to Cite?
AbstractThe thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a Si O2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45249
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDing, Len_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-10-30T06:20:59Z-
dc.date.available2007-10-30T06:20:59Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 87 n. 12, p. 1-3en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45249-
dc.description.abstractThe thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a Si O2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also. © 2005 American Institute of Physics.en_HK
dc.format.extent78820 bytes-
dc.format.extent13983 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleThermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO 2 matrixen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=12&spage=121903:1&epage=3&date=2005&atitle=Thermal+annealing+effect+on+the+band+gap+and+dielectric+functions+of+silicon+nanocrystals+embedded+in+SIO2+matrixen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2051807en_HK
dc.identifier.scopuseid_2-s2.0-28344438937en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-28344438937&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume87en_HK
dc.identifier.issue12en_HK
dc.identifier.spage1en_HK
dc.identifier.epage3en_HK
dc.identifier.isiWOS:000231907200019-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridLiu, YC=36062391300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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