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Article: Quantum transport through C 48N 12 based atomic devices
Title | Quantum transport through C 48N 12 based atomic devices |
---|---|
Authors | |
Keywords | Physics Chemistry physical chemistry |
Issue Date | 2006 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jcp.aip.org/jcp/staff.jsp |
Citation | Journal of Chemical Physics, 2006, v. 124 n. 11, article no. 114702 How to Cite? |
Abstract | We report numerical calculations on the quantum transport through C 48N 12 based devices from first principles. We find that the transport properties are very sensitive to orientations of the molecules to the electrode. Different orientations can give rise to semiconducting to metallic behaviors. Our results show that the charge transfer which can be tuned by the gate voltage plays an important role in determining the transport properties. By varying the gate voltages, the transport properties can be changed from semiconducting to metallic behaviors and thereby magnifying effect can be achieved. © 2006 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/45246 |
ISSN | 2023 Impact Factor: 3.1 2023 SCImago Journal Rankings: 1.101 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Xu, Y | en_HK |
dc.contributor.author | Wang, J | en_HK |
dc.contributor.author | Xu, S | en_HK |
dc.date.accessioned | 2007-10-30T06:20:56Z | - |
dc.date.available | 2007-10-30T06:20:56Z | - |
dc.date.issued | 2006 | en_HK |
dc.identifier.citation | Journal of Chemical Physics, 2006, v. 124 n. 11, article no. 114702 | - |
dc.identifier.issn | 0021-9606 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/45246 | - |
dc.description.abstract | We report numerical calculations on the quantum transport through C 48N 12 based devices from first principles. We find that the transport properties are very sensitive to orientations of the molecules to the electrode. Different orientations can give rise to semiconducting to metallic behaviors. Our results show that the charge transfer which can be tuned by the gate voltage plays an important role in determining the transport properties. By varying the gate voltages, the transport properties can be changed from semiconducting to metallic behaviors and thereby magnifying effect can be achieved. © 2006 American Institute of Physics. | en_HK |
dc.format.extent | 378741 bytes | - |
dc.format.extent | 6153 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jcp.aip.org/jcp/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Chemical Physics | en_HK |
dc.rights | Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Chemical Physics, 2006, v. 124 n. 11, article no. 114702 and may be found at https://doi.org/10.1063/1.2174879 | - |
dc.subject | Physics Chemistry | en_HK |
dc.subject | physical chemistry | en_HK |
dc.title | Quantum transport through C 48N 12 based atomic devices | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-9606&volume=124&issue=11&spage=114702&epage=&date=2006&atitle=Quantum+transport+through+C48N12+based+atomic+devices | en_HK |
dc.identifier.email | Xu, S: sjxu@hku.hk | en_HK |
dc.identifier.authority | Xu, S=rp00821 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.2174879 | en_HK |
dc.identifier.pmid | 16555905 | en_HK |
dc.identifier.scopus | eid_2-s2.0-34547554714 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-34547554714&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 124 | en_HK |
dc.identifier.issue | 11 | en_HK |
dc.identifier.spage | article no. 114702 | - |
dc.identifier.epage | article no. 114702 | - |
dc.identifier.isi | WOS:000236160000039 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Xu, Y=7406447308 | en_HK |
dc.identifier.scopusauthorid | Wang, J=37262424300 | en_HK |
dc.identifier.scopusauthorid | Xu, S=7404439005 | en_HK |
dc.identifier.issnl | 0021-9606 | - |