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Article: Quantum transport through C 48N 12 based atomic devices

TitleQuantum transport through C 48N 12 based atomic devices
Authors
KeywordsPhysics Chemistry
physical chemistry
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jcp.aip.org/jcp/staff.jsp
Citation
Journal Of Chemical Physics, 2006, v. 124 n. 11 How to Cite?
AbstractWe report numerical calculations on the quantum transport through C 48N 12 based devices from first principles. We find that the transport properties are very sensitive to orientations of the molecules to the electrode. Different orientations can give rise to semiconducting to metallic behaviors. Our results show that the charge transfer which can be tuned by the gate voltage plays an important role in determining the transport properties. By varying the gate voltages, the transport properties can be changed from semiconducting to metallic behaviors and thereby magnifying effect can be achieved. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45246
ISSN
2015 Impact Factor: 2.894
2015 SCImago Journal Rankings: 0.959
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, Yen_HK
dc.contributor.authorWang, Jen_HK
dc.contributor.authorXu, Sen_HK
dc.date.accessioned2007-10-30T06:20:56Z-
dc.date.available2007-10-30T06:20:56Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal Of Chemical Physics, 2006, v. 124 n. 11en_HK
dc.identifier.issn0021-9606en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45246-
dc.description.abstractWe report numerical calculations on the quantum transport through C 48N 12 based devices from first principles. We find that the transport properties are very sensitive to orientations of the molecules to the electrode. Different orientations can give rise to semiconducting to metallic behaviors. Our results show that the charge transfer which can be tuned by the gate voltage plays an important role in determining the transport properties. By varying the gate voltages, the transport properties can be changed from semiconducting to metallic behaviors and thereby magnifying effect can be achieved. © 2006 American Institute of Physics.en_HK
dc.format.extent378741 bytes-
dc.format.extent6153 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jcp.aip.org/jcp/staff.jspen_HK
dc.relation.ispartofJournal of Chemical Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Chemistryen_HK
dc.subjectphysical chemistryen_HK
dc.titleQuantum transport through C 48N 12 based atomic devicesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-9606&volume=124&issue=11&spage=114702&epage=&date=2006&atitle=Quantum+transport+through+C48N12+based+atomic+devicesen_HK
dc.identifier.emailXu, S: sjxu@hku.hken_HK
dc.identifier.authorityXu, S=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2174879en_HK
dc.identifier.pmid16555905en_HK
dc.identifier.scopuseid_2-s2.0-34547554714en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34547554714&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume124en_HK
dc.identifier.issue11en_HK
dc.identifier.isiWOS:000236160000039-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, Y=7406447308en_HK
dc.identifier.scopusauthoridWang, J=37262424300en_HK
dc.identifier.scopusauthoridXu, S=7404439005en_HK

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