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Conference Paper: Magnetic doping and characterization of n-type GaN

TitleMagnetic doping and characterization of n-type GaN
Authors
Cai, XMDjurišić, ABXie, MHLiu, HZhang, XXZhu, JJYang, HLeung, YH
KeywordsMass spectrometry
Quantum electronics
Semiconductor doping
Superconductors
X-rays -- Diffraction
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/
Citation
AIP Conference Proceedings, 2005, v. 772 n. 1, p. 319-320 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1994117
Abstractn-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and characterized by various methods. Hall measurement shows that the samples still remain n-type after the diffusion. Secondary Ion Mass Spectroscopy (SIMS) results show a good diffusion of Mn and Cr inside GaN. X-ray diffraction (XRD) reveals no secondary phases in the samples. Superconducting quantum interference device (SQUID) results show that the samples are ferromagnetic up to room temperature. The possible origin of ferromagnetism is discussed. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/45243
ISSN
0094-243X
2023 SCImago Journal Rankings: 0.152
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorCai, XMen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorLiu, Hen_HK
dc.contributor.authorZhang, XXen_HK
dc.contributor.authorZhu, JJen_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorLeung, YHen_HK
dc.date.accessioned2007-10-30T06:20:50Z-
dc.date.available2007-10-30T06:20:50Z-
dc.date.issued2005en_HK
dc.identifier.citationAIP Conference Proceedings, 2005, v. 772 n. 1, p. 319-320-
dc.identifier.issn0094-243Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/45243-
dc.description.abstractn-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and characterized by various methods. Hall measurement shows that the samples still remain n-type after the diffusion. Secondary Ion Mass Spectroscopy (SIMS) results show a good diffusion of Mn and Cr inside GaN. X-ray diffraction (XRD) reveals no secondary phases in the samples. Superconducting quantum interference device (SQUID) results show that the samples are ferromagnetic up to room temperature. The possible origin of ferromagnetism is discussed. © 2005 American Institute of Physics.en_HK
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dc.format.extent4804 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/en_HK
dc.relation.ispartofAIP Conference Proceedingsen_HK
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in AIP Conference Proceedings, 2005, v. 772 n. 1, p. 319-320 and may be found at https://doi.org/10.1063/1.1994117-
dc.subjectMass spectrometryen_HK
dc.subjectQuantum electronicsen_HK
dc.subjectSemiconductor dopingen_HK
dc.subjectSuperconductorsen_HK
dc.subjectX-rays -- Diffractionen_HK
dc.titleMagnetic doping and characterization of n-type GaNen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1551-7616&volume=772&issue=1&spage=319&epage=320&date=2005&atitle=Magnetic+Doping+and+Characterization+of+n-type+GaNen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1994117en_HK
dc.identifier.scopuseid_2-s2.0-33749522012en_HK
dc.identifier.hkuros103762-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33749522012&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume772en_HK
dc.identifier.issue1-
dc.identifier.spage319en_HK
dc.identifier.epage320en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCai, XM=8923610200en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridLiu, H=36066241300en_HK
dc.identifier.scopusauthoridZhang, XX=36044634000en_HK
dc.identifier.scopusauthoridZhu, JJ=8690501700en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK
dc.identifier.scopusauthoridLeung, YH=7201463866en_HK
dc.identifier.issnl0094-243X-

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