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Article: Engineering domain configurations for enhanced piezoelectricity in barium titanate single crystals

TitleEngineering domain configurations for enhanced piezoelectricity in barium titanate single crystals
Authors
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 3, p. 1-3 How to Cite?
AbstractIn this letter, we propose a mechanism for enhanced piezoelectricity that takes advantage of both intrinsic crystalline anisotropy of ferroelectric crystal and extrinsic 90°domain switching of ferroelectric variant. The domain configurations we consider here are not clamped, and thus allow domain switching driven by the competition between external electric field and internal depolarization field. The intrinsic and extrinsic piezoelectric responses of barium titanate single crystals under different crystallographic orientations are calculated using an energy minimization theory, where it is observed that the piezoelectric coefficient is significantly enhanced by the 90°domain switching, especially under the small field measurement where the domain wall movement is reversible, which is consistent with recent experimental observations. The optimal crystallographic orientation is also identified. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44915
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, JJen_HK
dc.contributor.authorZhou, YCen_HK
dc.contributor.authorSoh, AKen_HK
dc.contributor.authorLi, JYen_HK
dc.date.accessioned2007-10-30T06:13:22Z-
dc.date.available2007-10-30T06:13:22Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 3, p. 1-3en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44915-
dc.description.abstractIn this letter, we propose a mechanism for enhanced piezoelectricity that takes advantage of both intrinsic crystalline anisotropy of ferroelectric crystal and extrinsic 90°domain switching of ferroelectric variant. The domain configurations we consider here are not clamped, and thus allow domain switching driven by the competition between external electric field and internal depolarization field. The intrinsic and extrinsic piezoelectric responses of barium titanate single crystals under different crystallographic orientations are calculated using an energy minimization theory, where it is observed that the piezoelectric coefficient is significantly enhanced by the 90°domain switching, especially under the small field measurement where the domain wall movement is reversible, which is consistent with recent experimental observations. The optimal crystallographic orientation is also identified. © 2006 American Institute of Physics.en_HK
dc.format.extent97335 bytes-
dc.format.extent2006 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleEngineering domain configurations for enhanced piezoelectricity in barium titanate single crystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=88&issue=3&spage=032904:1&epage=3&date=2006&atitle=Engineering+domain+configurations+for+enhanced+piezoelectricity+in+barium+titanate+single+crystalsen_HK
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_HK
dc.identifier.authoritySoh, AK=rp00170en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2166480en_HK
dc.identifier.scopuseid_2-s2.0-31144465576en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-31144465576&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume88en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1en_HK
dc.identifier.epage3en_HK
dc.identifier.isiWOS:000234757100048-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, JJ=16069257100en_HK
dc.identifier.scopusauthoridZhou, YC=16311148400en_HK
dc.identifier.scopusauthoridSoh, AK=7006795203en_HK
dc.identifier.scopusauthoridLi, JY=12759616100en_HK

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