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Article: New microhumidity field-effect transistor sensor in ppmv level

TitleNew microhumidity field-effect transistor sensor in ppmv level
Authors
Keywordsinstruments
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://ojps.aip.org/rsio/
Citation
Review Of Scientific Instruments, 1999, v. 70 n. 2, p. 1565-1567 How to Cite?
AbstractAn integrated humidity sensor able to detect and measure a very low humidity concentration and higher relative humidity (RH) levels as well with the possibility of industrial application has been designed and fabricated using very large scale integration technology where thin porous Al2O3 film acts as humidity sensing material. The porous structure of Al2O3 has been obtained by anodic oxidation of a thin film of Al in sulfuric acid. During anodic oxidation, a few top atomic layers of Ta are also oxidized into Ta2O5 whose properties affect the normal sensing properties of Al2O3 and a better quality of sensor with higher sensitivity and speed is obtained. The gate insulator structure of the field-effect transistor is SiO2/Si3N4/Ta2O5/Al 2O3. The device is basically an enhancement mode metal-oxide-semiconductor field-effect transistor. The drain current ID of the device is measured at constant gate and drain voltages at 25°C and found to be sensitive up to less than ∼1 ppnv moisture concentration. The response time of the sensor in ppmv level is less than 1 s. The device is also found to be very sensitive at higher RH levels and shows a linear dependency on RH. The response and recovery times of the sensor are 2 and 6 s, respectively. © 1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44850
ISSN
2015 Impact Factor: 1.336
2015 SCImago Journal Rankings: 0.571
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChakraborty, Sen_HK
dc.contributor.authorHara, Ken_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2007-10-30T06:11:36Z-
dc.date.available2007-10-30T06:11:36Z-
dc.date.issued1999en_HK
dc.identifier.citationReview Of Scientific Instruments, 1999, v. 70 n. 2, p. 1565-1567en_HK
dc.identifier.issn0034-6748en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44850-
dc.description.abstractAn integrated humidity sensor able to detect and measure a very low humidity concentration and higher relative humidity (RH) levels as well with the possibility of industrial application has been designed and fabricated using very large scale integration technology where thin porous Al2O3 film acts as humidity sensing material. The porous structure of Al2O3 has been obtained by anodic oxidation of a thin film of Al in sulfuric acid. During anodic oxidation, a few top atomic layers of Ta are also oxidized into Ta2O5 whose properties affect the normal sensing properties of Al2O3 and a better quality of sensor with higher sensitivity and speed is obtained. The gate insulator structure of the field-effect transistor is SiO2/Si3N4/Ta2O5/Al 2O3. The device is basically an enhancement mode metal-oxide-semiconductor field-effect transistor. The drain current ID of the device is measured at constant gate and drain voltages at 25°C and found to be sensitive up to less than ∼1 ppnv moisture concentration. The response time of the sensor in ppmv level is less than 1 s. The device is also found to be very sensitive at higher RH levels and shows a linear dependency on RH. The response and recovery times of the sensor are 2 and 6 s, respectively. © 1999 American Institute of Physics.en_HK
dc.format.extent366049 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://ojps.aip.org/rsio/en_HK
dc.relation.ispartofReview of Scientific Instrumentsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectinstrumentsen_HK
dc.titleNew microhumidity field-effect transistor sensor in ppmv levelen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0034-6748&volume=70&issue=2&spage=1565&epage=1567&date=1999&atitle=New+microhumidity+field-effect+transistor+sensor+in+ppmv+levelen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1149625en_HK
dc.identifier.scopuseid_2-s2.0-0042263448en_HK
dc.identifier.hkuros44789-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0042263448&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume70en_HK
dc.identifier.issue2en_HK
dc.identifier.spage1565en_HK
dc.identifier.epage1567en_HK
dc.identifier.isiWOS:000078490400058-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChakraborty, S=35577738500en_HK
dc.identifier.scopusauthoridHara, K=36019221400en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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