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Article: Vacancy-enhanced intermixing in highly strained InGaAs/GaAs multiple quantum well photodetector

TitleVacancy-enhanced intermixing in highly strained InGaAs/GaAs multiple quantum well photodetector
Authors
KeywordsPhysics Engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 86 n. 6, p. 3402-3407 How to Cite?
AbstractImpurity-free vacancy disordering techniques using rapid thermal annealing with electron-beam evaporated SiO2 encapsulant was utilized to study its effect on the optical and electrical properties of the highly strained InGaAs/GaAs quantum well infrared photodetector. The photoluminescence peak is blueshifted and its line width does not increase much, indicating the compositional disordering of the quantum well structure and there is no strain relaxation or minimal deterioration of the heterostructure quality. Both transverse electric and transverse magnetic infrared intersubband transitions are retained and observed after intermixing. The absorption peak wavelength is redshifted from the as grown 10.2 µm to the interdiffused 10.5 and 11.2 µm, for 5 and 10 s annealing at 850 °C, respectively, without appreciable degradation in absorption strength. Theoretical calculations of the absorption spectra are in good agreement with the experimental data. Annealed responsivity spectra of both 0° and 90° polarization are of comparable amplitude but with narrower spectra line width. Dark current of the annealed devices is found to be an order of magnitude larger than the as-grown one at 77 K.
Persistent Identifierhttp://hdl.handle.net/10722/44824
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLee, ASWen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorKarunasiri, Gen_HK
dc.date.accessioned2007-10-30T06:11:02Z-
dc.date.available2007-10-30T06:11:02Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 86 n. 6, p. 3402-3407en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44824-
dc.description.abstractImpurity-free vacancy disordering techniques using rapid thermal annealing with electron-beam evaporated SiO2 encapsulant was utilized to study its effect on the optical and electrical properties of the highly strained InGaAs/GaAs quantum well infrared photodetector. The photoluminescence peak is blueshifted and its line width does not increase much, indicating the compositional disordering of the quantum well structure and there is no strain relaxation or minimal deterioration of the heterostructure quality. Both transverse electric and transverse magnetic infrared intersubband transitions are retained and observed after intermixing. The absorption peak wavelength is redshifted from the as grown 10.2 µm to the interdiffused 10.5 and 11.2 µm, for 5 and 10 s annealing at 850 °C, respectively, without appreciable degradation in absorption strength. Theoretical calculations of the absorption spectra are in good agreement with the experimental data. Annealed responsivity spectra of both 0° and 90° polarization are of comparable amplitude but with narrower spectra line width. Dark current of the annealed devices is found to be an order of magnitude larger than the as-grown one at 77 K.en_HK
dc.format.extent108162 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleVacancy-enhanced intermixing in highly strained InGaAs/GaAs multiple quantum well photodetectoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=86&issue=6&spage=3402&epage=3407&date=1999&atitle=Vacancy-enhanced+intermixing+in+highly+strained+InGaAs/GaAs+multiple+quantum+well+photodetectoren_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.371220en_HK
dc.identifier.isiWOS:000082232400073-

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