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Article: A humidity-sensing model for metal-insulator-semiconductor capacitors with porous ceramic film

TitleA humidity-sensing model for metal-insulator-semiconductor capacitors with porous ceramic film
Authors
KeywordsPhysics Engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2000, v. 87 n. 12, p. 8716-8720 How to Cite?
AbstractA new physical model for a humidity-sensitive metal-insulator-semiconductor (MIS) capacitor with porous thin film is proposed. The model is used to determine water adsorption isotherm and calculate pore-size distribution of the film. The relative-humidity dependences of the capacitance and resistance of the film were measured. The effects of frequency on the dielectric constant of the film and the current of the MIS structure under various relative humidities were investigated. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44821
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, GQen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorHuang, MQen_HK
dc.contributor.authorZeng, SHen_HK
dc.contributor.authorLi, Ben_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-10-30T06:10:58Z-
dc.date.available2007-10-30T06:10:58Z-
dc.date.issued2000en_HK
dc.identifier.citationJournal Of Applied Physics, 2000, v. 87 n. 12, p. 8716-8720en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44821-
dc.description.abstractA new physical model for a humidity-sensitive metal-insulator-semiconductor (MIS) capacitor with porous thin film is proposed. The model is used to determine water adsorption isotherm and calculate pore-size distribution of the film. The relative-humidity dependences of the capacitance and resistance of the film were measured. The effects of frequency on the dielectric constant of the film and the current of the MIS structure under various relative humidities were investigated. © 2000 American Institute of Physics.en_HK
dc.format.extent377194 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleA humidity-sensing model for metal-insulator-semiconductor capacitors with porous ceramic filmen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=87&issue=12&spage=8716&epage=8720&date=2000&atitle=A+humidity-sensing+model+for+metal-insulator-semiconductor+capacitors+with+porous+ceramic+filmen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.373601en_HK
dc.identifier.scopuseid_2-s2.0-0000421740en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000421740&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume87en_HK
dc.identifier.issue12en_HK
dc.identifier.spage8716en_HK
dc.identifier.epage8720en_HK
dc.identifier.isiWOS:000087346400070-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, GQ=7407050307en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridHuang, MQ=7404259759en_HK
dc.identifier.scopusauthoridZeng, SH=7202412592en_HK
dc.identifier.scopusauthoridLi, B=26643217800en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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