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Article: Optimization of photomask design for reducing aberration-induced placement error

TitleOptimization of photomask design for reducing aberration-induced placement error
Authors
KeywordsAberration
Alternating phase-shifting mask (PSM)
Attenuated PSM
Monte Carlo analysis
Optimization
Photomask
Placement error
Issue Date2006
PublisherIEEE.
Citation
Ieee Transactions On Semiconductor Manufacturing, 2006, v. 19 n. 3, p. 277-285 How to Cite?
AbstractIn semiconductor manufacturing, the accurate placement of circuit components ensures the proper functioning of microelectronic circuits. This is often subject to photolithography, an optical technique that transfers circuit patterns from photomasks to silicon wafers. Sources of placement error include aberration and misalignment between different levels, and we focus on the former. Aberration is an optical phenomenon that often degrades imaging system performance. Since aberration differs from one imaging system to another, a photomask design that minimizes the aberration-induced placement error is desired. In this paper, we discuss the optimization process of a general one-dimensional mask pattern under a general illumination condition. The constraint is a known population mean of the root mean square aberrations for the imaging systems under consideration. To apply the theory, we search for the optimal parameters for two common mask designs: alternating phase-shifting masks (PSMs) and attenuated PSMs. The theoretical results are compared with those from a Monte Carlo analysis on a large set of imaging systems. These results are indicative to mask manufacturers and circuit designers of increasing manufacturability of circuits. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/44800
ISSN
2015 Impact Factor: 1.045
2015 SCImago Journal Rankings: 0.640
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorMak, GYen_HK
dc.contributor.authorWong, AKen_HK
dc.contributor.authorLam, EYen_HK
dc.date.accessioned2007-10-30T06:10:30Z-
dc.date.available2007-10-30T06:10:30Z-
dc.date.issued2006en_HK
dc.identifier.citationIeee Transactions On Semiconductor Manufacturing, 2006, v. 19 n. 3, p. 277-285en_HK
dc.identifier.issn0894-6507en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44800-
dc.description.abstractIn semiconductor manufacturing, the accurate placement of circuit components ensures the proper functioning of microelectronic circuits. This is often subject to photolithography, an optical technique that transfers circuit patterns from photomasks to silicon wafers. Sources of placement error include aberration and misalignment between different levels, and we focus on the former. Aberration is an optical phenomenon that often degrades imaging system performance. Since aberration differs from one imaging system to another, a photomask design that minimizes the aberration-induced placement error is desired. In this paper, we discuss the optimization process of a general one-dimensional mask pattern under a general illumination condition. The constraint is a known population mean of the root mean square aberrations for the imaging systems under consideration. To apply the theory, we search for the optimal parameters for two common mask designs: alternating phase-shifting masks (PSMs) and attenuated PSMs. The theoretical results are compared with those from a Monte Carlo analysis on a large set of imaging systems. These results are indicative to mask manufacturers and circuit designers of increasing manufacturability of circuits. © 2006 IEEE.en_HK
dc.format.extent648190 bytes-
dc.format.extent37798 bytes-
dc.format.extent4084 bytes-
dc.format.extent2067 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeimage/tiff-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Transactions on Semiconductor Manufacturingen_HK
dc.rights©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectAberrationen_HK
dc.subjectAlternating phase-shifting mask (PSM)en_HK
dc.subjectAttenuated PSMen_HK
dc.subjectMonte Carlo analysisen_HK
dc.subjectOptimizationen_HK
dc.subjectPhotomasken_HK
dc.subjectPlacement erroren_HK
dc.titleOptimization of photomask design for reducing aberration-induced placement erroren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0894-6507&volume=19&issue=3&spage=277&epage=285&date=2006&atitle=Optimization+of+photomask+design+for+reducing+aberration-induced+placement+erroren_HK
dc.identifier.emailLam, EY:elam@eee.hku.hken_HK
dc.identifier.authorityLam, EY=rp00131en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/TSM.2006.879412en_HK
dc.identifier.scopuseid_2-s2.0-33747394821en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33747394821&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume19en_HK
dc.identifier.issue3en_HK
dc.identifier.spage277en_HK
dc.identifier.epage285en_HK
dc.identifier.isiWOS:000239706300001-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridMak, GY=8678365200en_HK
dc.identifier.scopusauthoridWong, AK=7403147663en_HK
dc.identifier.scopusauthoridLam, EY=7102890004en_HK

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