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Article: Lasing in GaN microdisks pivoted on Si

TitleLasing in GaN microdisks pivoted on Si
Authors
Choi, HWHui, KNLai, PTChen, PZhang, XHTripathy, STeng, JHChua, SJ
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 21, article no. 211101 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2392673
AbstractArrays of pivoted GaN microdisks have been fabricated on a GaNSi material by a combination of dry and wet etching. The Si material beneath the GaN microdisks is removed by wet etching, leaving behind a fine pillar to support the disks. Raman spectroscopy reveals substantial strain relaxation in these structures. Resonant modes, corresponding to whispering gallery modes, are observed in the photoluminescence spectra. Stimulated emission is achieved at higher optical pumping intensities. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44737
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000242220000001
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorHui, KNen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChen, Pen_HK
dc.contributor.authorZhang, XHen_HK
dc.contributor.authorTripathy, Sen_HK
dc.contributor.authorTeng, JHen_HK
dc.contributor.authorChua, SJen_HK
dc.date.accessioned2007-10-30T06:09:06Z-
dc.date.available2007-10-30T06:09:06Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 21, article no. 211101-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44737-
dc.description.abstractArrays of pivoted GaN microdisks have been fabricated on a GaNSi material by a combination of dry and wet etching. The Si material beneath the GaN microdisks is removed by wet etching, leaving behind a fine pillar to support the disks. Raman spectroscopy reveals substantial strain relaxation in these structures. Resonant modes, corresponding to whispering gallery modes, are observed in the photoluminescence spectra. Stimulated emission is achieved at higher optical pumping intensities. © 2006 American Institute of Physics.en_HK
dc.format.extent339650 bytes-
dc.format.extent2146 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2006, v. 89 n. 21, article no. 211101 and may be found at https://doi.org/10.1063/1.2392673-
dc.subjectPhysics Engineeringen_HK
dc.titleLasing in GaN microdisks pivoted on Sien_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=89&issue=21&spage=211101:1&epage=3&date=2006&atitle=Lasing+in+GaN+microdisks+pivoted+on+Sien_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2392673en_HK
dc.identifier.scopuseid_2-s2.0-33845447631en_HK
dc.identifier.hkuros135369-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33845447631&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue21en_HK
dc.identifier.spagearticle no. 211101-
dc.identifier.epagearticle no. 211101-
dc.identifier.isiWOS:000242220000001-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridHui, KN=12139840100en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChen, P=7408356257en_HK
dc.identifier.scopusauthoridZhang, XH=13006006900en_HK
dc.identifier.scopusauthoridTripathy, S=8698106400en_HK
dc.identifier.scopusauthoridTeng, JH=7202560065en_HK
dc.identifier.scopusauthoridChua, SJ=35516064500en_HK
dc.identifier.issnl0003-6951-

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