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Article: Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors

TitleAvalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors
Authors
Yan, BPWang, HNg, GI
KeywordsPhysics Engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 77 n. 25, p. 4217-4219 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1336551
AbstractThe hole-initiated impact ionization multiplication factor Mp–1 and the ionization coefficient αp in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors (HBTs) are presented. A large discrepancy is observed at low electric field when the measured data from the p-n-p HBTs are compared with those given from avalanche photodiode. The results show that the conventional impact ionization models, based on local electric field, substantially overestimate the hole impact ionization multiplication factor Mp–1. We believe that the hole ionization coefficient in p-n-p HBTs where significant dead space effects occur in the collector space charge region. ©2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44734
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000165824200046

 

DC FieldValueLanguage
dc.contributor.authorYan, BPen_HK
dc.contributor.authorWang, Hen_HK
dc.contributor.authorNg, GIen_HK
dc.date.accessioned2007-10-30T06:09:02Z-
dc.date.available2007-10-30T06:09:02Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics Letters, 2000, v. 77 n. 25, p. 4217-4219-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44734-
dc.description.abstractThe hole-initiated impact ionization multiplication factor Mp–1 and the ionization coefficient αp in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors (HBTs) are presented. A large discrepancy is observed at low electric field when the measured data from the p-n-p HBTs are compared with those given from avalanche photodiode. The results show that the conventional impact ionization models, based on local electric field, substantially overestimate the hole impact ionization multiplication factor Mp–1. We believe that the hole ionization coefficient in p-n-p HBTs where significant dead space effects occur in the collector space charge region. ©2000 American Institute of Physics.en_HK
dc.format.extent55391 bytes-
dc.format.extent2795 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2000, v. 77 n. 25, p. 4217-4219 and may be found at https://doi.org/10.1063/1.1336551-
dc.subjectPhysics Engineeringen_HK
dc.titleAvalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=77&issue=25&spage=4217&epage=4219&date=2000&atitle=Avalanche+multiplication+and+ionization+coefficient+in+AlGaAs/InGaAs+p-n-p+heterojunction+bipolar+transistorsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1336551en_HK
dc.identifier.scopuseid_2-s2.0-0347561710-
dc.identifier.volume77-
dc.identifier.issue25-
dc.identifier.spage4217-
dc.identifier.epage4219-
dc.identifier.isiWOS:000165824200046-
dc.identifier.issnl0003-6951-

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