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Article: Influence of lateral field on the relaxation oscillation frequency of semiconductor lasers
Title | Influence of lateral field on the relaxation oscillation frequency of semiconductor lasers |
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Authors | |
Keywords | Electronics physics Optics |
Issue Date | 1996 |
Publisher | IEEE. |
Citation | IEEE Journal of Quantum Electronics, 1996, v. 32 n. 1, p. 1-3 How to Cite? |
Abstract | We demonstrate theoretically that the lateral field distribution can be utilized to enhance the relaxation oscillation frequency of semiconductor lasers. It is found, for some laser parameters, that gain-guided semiconductor lasers with narrow stripe can exhibit higher relaxation oscillation frequency than index-guided devices. |
Persistent Identifier | http://hdl.handle.net/10722/44728 |
ISSN | 2023 Impact Factor: 2.2 2023 SCImago Journal Rankings: 0.563 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Yu, SF | en_HK |
dc.contributor.author | Li, EH | en_HK |
dc.date.accessioned | 2007-10-30T06:08:54Z | - |
dc.date.available | 2007-10-30T06:08:54Z | - |
dc.date.issued | 1996 | en_HK |
dc.identifier.citation | IEEE Journal of Quantum Electronics, 1996, v. 32 n. 1, p. 1-3 | en_HK |
dc.identifier.issn | 0018-9197 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/44728 | - |
dc.description.abstract | We demonstrate theoretically that the lateral field distribution can be utilized to enhance the relaxation oscillation frequency of semiconductor lasers. It is found, for some laser parameters, that gain-guided semiconductor lasers with narrow stripe can exhibit higher relaxation oscillation frequency than index-guided devices. | en_HK |
dc.format.extent | 387829 bytes | - |
dc.format.extent | 14323 bytes | - |
dc.format.extent | 4647 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | IEEE. | en_HK |
dc.relation.ispartof | IEEE Journal of Quantum Electronics | - |
dc.rights | ©1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | - |
dc.subject | Electronics physics | en_HK |
dc.subject | Optics | en_HK |
dc.title | Influence of lateral field on the relaxation oscillation frequency of semiconductor lasers | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9197&volume=32&issue=1&spage=1&epage=3&date=1996&atitle=Influence+of+lateral+field+on+the+relaxation+oscillation+frequency+of+semiconductor+lasers | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1109/3.481913 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0029771245 | - |
dc.identifier.hkuros | 11615 | - |
dc.identifier.isi | WOS:A1996TP75200001 | - |
dc.identifier.issnl | 0018-9197 | - |