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Article: Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

TitleQuantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
Authors
Xu, SJLi, GQWang, YJZhao, YChen, GHZhao, DGZhu, JJYang, HYu, DPWang, JN
KeywordsPhysics engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 8, article no. 083123 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2179113
AbstractQuantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ∼0.2 and 200 cm-1, respectively, for the InGaN QDs. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44610
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000235553300081
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorWang, YJen_HK
dc.contributor.authorZhao, Yen_HK
dc.contributor.authorChen, GHen_HK
dc.contributor.authorZhao, DGen_HK
dc.contributor.authorZhu, JJen_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorYu, DPen_HK
dc.contributor.authorWang, JNen_HK
dc.date.accessioned2007-10-30T06:05:41Z-
dc.date.available2007-10-30T06:05:41Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 8, article no. 083123-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44610-
dc.description.abstractQuantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ∼0.2 and 200 cm-1, respectively, for the InGaN QDs. © 2006 American Institute of Physics.en_HK
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dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2006, v. 88 n. 8, article no. 083123 and may be found at https://doi.org/10.1063/1.2179113-
dc.subjectPhysics engineeringen_HK
dc.titleQuantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dotsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=88&issue=8&spage=083123:1&epage=3&date=20/2/2006&atitle=Quantum+dissipation+and+broadening+mechanisms+due+to+electron-phonon+interactions+in+self-formed+InGaN+quantum+dotsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailChen, GH: ghchen@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityChen, GH=rp00671en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2179113en_HK
dc.identifier.scopuseid_2-s2.0-33644501465en_HK
dc.identifier.hkuros114619-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33644501465&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume88en_HK
dc.identifier.issue8en_HK
dc.identifier.spagearticle no. 083123-
dc.identifier.epagearticle no. 083123-
dc.identifier.isiWOS:000235553300081-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLi, GQ=35187337800en_HK
dc.identifier.scopusauthoridWang, YJ=8296286800en_HK
dc.identifier.scopusauthoridZhao, Y=8579132600en_HK
dc.identifier.scopusauthoridChen, GH=35253368600en_HK
dc.identifier.scopusauthoridZhao, DG=7403489944en_HK
dc.identifier.scopusauthoridZhu, JJ=8690501700en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK
dc.identifier.scopusauthoridYu, DP=7404667022en_HK
dc.identifier.scopusauthoridWang, JN=7701333904en_HK
dc.identifier.issnl0003-6951-

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