File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

TitleQuantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
Authors
KeywordsPhysics engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 8 How to Cite?
AbstractQuantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ∼0.2 and 200 cm-1, respectively, for the InGaN QDs. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44610
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorWang, YJen_HK
dc.contributor.authorZhao, Yen_HK
dc.contributor.authorChen, GHen_HK
dc.contributor.authorZhao, DGen_HK
dc.contributor.authorZhu, JJen_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorYu, DPen_HK
dc.contributor.authorWang, JNen_HK
dc.date.accessioned2007-10-30T06:05:41Z-
dc.date.available2007-10-30T06:05:41Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 8en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44610-
dc.description.abstractQuantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be ∼0.2 and 200 cm-1, respectively, for the InGaN QDs. © 2006 American Institute of Physics.en_HK
dc.format.extent400057 bytes-
dc.format.extent1819 bytes-
dc.format.extent2671 bytes-
dc.format.extent6153 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleQuantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dotsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=88&issue=8&spage=083123:1&epage=3&date=20/2/2006&atitle=Quantum+dissipation+and+broadening+mechanisms+due+to+electron-phonon+interactions+in+self-formed+InGaN+quantum+dotsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailChen, GH: ghchen@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityChen, GH=rp00671en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2179113en_HK
dc.identifier.scopuseid_2-s2.0-33644501465en_HK
dc.identifier.hkuros114619-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33644501465&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume88en_HK
dc.identifier.issue8en_HK
dc.identifier.isiWOS:000235553300081-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLi, GQ=35187337800en_HK
dc.identifier.scopusauthoridWang, YJ=8296286800en_HK
dc.identifier.scopusauthoridZhao, Y=8579132600en_HK
dc.identifier.scopusauthoridChen, GH=35253368600en_HK
dc.identifier.scopusauthoridZhao, DG=7403489944en_HK
dc.identifier.scopusauthoridZhu, JJ=8690501700en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK
dc.identifier.scopusauthoridYu, DP=7404667022en_HK
dc.identifier.scopusauthoridWang, JN=7701333904en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats