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Article: Temperature dependence of the LO phonon sidebands in free exciton emission of GaN

TitleTemperature dependence of the LO phonon sidebands in free exciton emission of GaN
Authors
Xu, SJLi, GQXiong, SJChe, CM
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2006, v. 99 n. 7, article no. 073508 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2188034
AbstractTemperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshapes and their energy spacings from the zero-phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of one- and two-phonon sidebands are significantly different. Segall-Mahan [Phys. Rev. 171, 935 (1968)] theory, taking the exciton-photon and exciton-phonon interactions into account, is employed to calculate the sidebands of one or two LO phonons for free excitons in a wide temperature range. Excellent agreement between the theory and experiment is achieved by using only one adjustable parameter, which leads to determination of the effective mass of heavy holes (∼0.5 m0). © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44602
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000236770900015
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorXiong, SJen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2007-10-30T06:05:29Z-
dc.date.available2007-10-30T06:05:29Z-
dc.date.issued2006en_HK
dc.identifier.citationJournal of Applied Physics, 2006, v. 99 n. 7, article no. 073508-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44602-
dc.description.abstractTemperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshapes and their energy spacings from the zero-phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of one- and two-phonon sidebands are significantly different. Segall-Mahan [Phys. Rev. 171, 935 (1968)] theory, taking the exciton-photon and exciton-phonon interactions into account, is employed to calculate the sidebands of one or two LO phonons for free excitons in a wide temperature range. Excellent agreement between the theory and experiment is achieved by using only one adjustable parameter, which leads to determination of the effective mass of heavy holes (∼0.5 m0). © 2006 American Institute of Physics.en_HK
dc.format.extent272790 bytes-
dc.format.extent4079 bytes-
dc.format.extent6153 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2006, v. 99 n. 7, article no. 073508 and may be found at https://doi.org/10.1063/1.2188034-
dc.subjectPhysics Engineeringen_HK
dc.titleTemperature dependence of the LO phonon sidebands in free exciton emission of GaNen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=99&issue=7&spage=073508:1&epage=5&date=2006&atitle=Temperature+dependence+of+the+LO+phonon+sidebands+in+free+exciton+emission+of+GaNen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2188034en_HK
dc.identifier.scopuseid_2-s2.0-33645933910en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645933910&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume99en_HK
dc.identifier.issue7en_HK
dc.identifier.spagearticle no. 073508-
dc.identifier.epagearticle no. 073508-
dc.identifier.isiWOS:000236770900015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLi, GQ=35187337800en_HK
dc.identifier.scopusauthoridXiong, SJ=7202791585en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.issnl0021-8979-

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