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Article: Influence of annealing on stimulated emission in ZnO nanorods

TitleInfluence of annealing on stimulated emission in ZnO nanorods
Authors
Kwok, WMDjurišić, ABLeung, YHLi, DTam, KHPhillips, DLChan, WK
KeywordsPhysics Engineering
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 89 n. 18, article no. 183112 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2378560
AbstractVertically aligned ZnO nanorod arrays with rod lengths in the range of 200-1500 nm were fabricated by a hydrothermal method. No stimulated emission was observed in as grown nanorods. Annealing of the rods in forming gas and oxygen significantly affected their optical properties and enabled the achievement of stimulated emission. The lowest lasing threshold and defect emission as well as the longest spontaneous emission decay times were obtained for nanorods annealed in oxygen flow. This indicates that interstitial oxygen, which is commonly assumed to be the cause of yellow-green defect emission, is not the dominant defect in hydrothermally grown nanorods. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/44598
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000241757500104
References
References in Scopus

 

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dc.contributor.authorKwok, WMen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLeung, YHen_HK
dc.contributor.authorLi, Den_HK
dc.contributor.authorTam, KHen_HK
dc.contributor.authorPhillips, DLen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2007-10-30T06:05:25Z-
dc.date.available2007-10-30T06:05:25Z-
dc.date.issued2006en_HK
dc.identifier.citationApplied Physics Letters, 2006, v. 89 n. 18, article no. 183112-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44598-
dc.description.abstractVertically aligned ZnO nanorod arrays with rod lengths in the range of 200-1500 nm were fabricated by a hydrothermal method. No stimulated emission was observed in as grown nanorods. Annealing of the rods in forming gas and oxygen significantly affected their optical properties and enabled the achievement of stimulated emission. The lowest lasing threshold and defect emission as well as the longest spontaneous emission decay times were obtained for nanorods annealed in oxygen flow. This indicates that interstitial oxygen, which is commonly assumed to be the cause of yellow-green defect emission, is not the dominant defect in hydrothermally grown nanorods. © 2006 American Institute of Physics.en_HK
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dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2006, v. 89 n. 18, article no. 183112 and may be found at https://doi.org/10.1063/1.2378560-
dc.subjectPhysics Engineeringen_HK
dc.titleInfluence of annealing on stimulated emission in ZnO nanorodsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=89&issue=18&spage=183112:1&epage=3&date=2006&atitle=Influence+of+annealing+on+stimulated+emission+in+ZnO+nanorodsen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailPhillips, DL: phillips@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityPhillips, DL=rp00770en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2378560en_HK
dc.identifier.scopuseid_2-s2.0-33750724449en_HK
dc.identifier.hkuros124851-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33750724449&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume89en_HK
dc.identifier.issue18en_HK
dc.identifier.spagearticle no. 183112-
dc.identifier.epagearticle no. 183112-
dc.identifier.isiWOS:000241757500104-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridKwok, WM=7103129332en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLeung, YH=7201463866en_HK
dc.identifier.scopusauthoridLi, D=26324923700en_HK
dc.identifier.scopusauthoridTam, KH=8533246200en_HK
dc.identifier.scopusauthoridPhillips, DL=7404519365en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.issnl0003-6951-

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