File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Principles and characteristics of a new generation plasma immersion ion implanter

TitlePrinciples and characteristics of a new generation plasma immersion ion implanter
Authors
KeywordsInstruments
Issue Date1997
PublisherAmerican Institute of Physics. The Journal's web site is located at http://ojps.aip.org/rsio/
Citation
Review of Scientific Instruments, 1997, v. 68 n. 4, p. 1866-1874 How to Cite?
AbstractA new generation multipurpose plasma immersion ion implanter (PIII) was custom designed, constructed, and installed in the City University of Hong Kong. The system is designed for general R&D applications in metallurgy, tribology, surface modification, and fabrication of novel materials. Using the new rf ion source in conjunction with the internal antenna system, the plasma density achieves excellent uniformity both laterally and axially. The system also incorporates two metal sources, including four metal arc sources and a sputtering electrode, so that multiple metal deposition and implantation steps can be performed in succession in the same equipment without exposing the samples to air. This capability can be critical to the study of surface properties and corrosion resistance. This article describes the design objectives, the novel features, and the characteristics of this new generation PIII equipment. ©1997 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/43557
ISSN
2015 Impact Factor: 1.336
2015 SCImago Journal Rankings: 0.571
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChu, PKen_HK
dc.contributor.authorTang, BYen_HK
dc.contributor.authorCheng, YCen_HK
dc.contributor.authorKo, PKen_HK
dc.date.accessioned2007-03-23T04:48:56Z-
dc.date.available2007-03-23T04:48:56Z-
dc.date.issued1997en_HK
dc.identifier.citationReview of Scientific Instruments, 1997, v. 68 n. 4, p. 1866-1874en_HK
dc.identifier.issn0034-6748en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43557-
dc.description.abstractA new generation multipurpose plasma immersion ion implanter (PIII) was custom designed, constructed, and installed in the City University of Hong Kong. The system is designed for general R&D applications in metallurgy, tribology, surface modification, and fabrication of novel materials. Using the new rf ion source in conjunction with the internal antenna system, the plasma density achieves excellent uniformity both laterally and axially. The system also incorporates two metal sources, including four metal arc sources and a sputtering electrode, so that multiple metal deposition and implantation steps can be performed in succession in the same equipment without exposing the samples to air. This capability can be critical to the study of surface properties and corrosion resistance. This article describes the design objectives, the novel features, and the characteristics of this new generation PIII equipment. ©1997 American Institute of Physics.en_HK
dc.format.extent314875 bytes-
dc.format.extent27136 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://ojps.aip.org/rsio/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectInstrumentsen_HK
dc.titlePrinciples and characteristics of a new generation plasma immersion ion implanteren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0034-6748&volume=68&issue=4&spage=1866&epage=1874&date=1997&atitle=Principles+and+characteristics+of+a+new+generation+plasma+immersion+ion+implanteren_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1147959en_HK
dc.identifier.hkuros22498-
dc.identifier.isiWOS:A1997WV61700044-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats