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Article: Effects of spin imbalance on the electric-field-driven quantum dissipationless spin current in p-doped semiconductors

TitleEffects of spin imbalance on the electric-field-driven quantum dissipationless spin current in p-doped semiconductors
Authors
KeywordsPhysics
Issue Date2004
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2004, v. 70 n. 23, p. 1-8 How to Cite?
AbstractIt was proposed recently by Murakami et al. [Science 301, 1348 (2003)] that in a large class of p-doped semiconductors, an applied electric field can drive a quantum dissipationless spin current in the direction perpendicular to the electric field. In this paper we investigate the effects of spin imbalance on this intrinsic spin Hall effect. We show that in a real sample with boundaries, due to the presence of spin imbalance near the edges of the sample, the spin Hall conductivity is not a constant but a sensitively position-dependent quantity, and due to this fact, in order to take the effects of spin imbalance properly into account, a microscopic calculation of both the quantum dissipationless spin Hall current and the spin accumulation on an equal footing is thus required. Based on such a microscopic calculation, a detailed discussion of the effects of spin imbalance on the intrinsic spin Hall effect in thin slabs of p-doped semiconductors are presented.
Persistent Identifierhttp://hdl.handle.net/10722/43454
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHu, Len_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorShen, SQen_HK
dc.date.accessioned2007-03-23T04:46:01Z-
dc.date.available2007-03-23T04:46:01Z-
dc.date.issued2004en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2004, v. 70 n. 23, p. 1-8en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43454-
dc.description.abstractIt was proposed recently by Murakami et al. [Science 301, 1348 (2003)] that in a large class of p-doped semiconductors, an applied electric field can drive a quantum dissipationless spin current in the direction perpendicular to the electric field. In this paper we investigate the effects of spin imbalance on this intrinsic spin Hall effect. We show that in a real sample with boundaries, due to the presence of spin imbalance near the edges of the sample, the spin Hall conductivity is not a constant but a sensitively position-dependent quantity, and due to this fact, in order to take the effects of spin imbalance properly into account, a microscopic calculation of both the quantum dissipationless spin Hall current and the spin accumulation on an equal footing is thus required. Based on such a microscopic calculation, a detailed discussion of the effects of spin imbalance on the intrinsic spin Hall effect in thin slabs of p-doped semiconductors are presented.en_HK
dc.format.extent103141 bytes-
dc.format.extent30720 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleEffects of spin imbalance on the electric-field-driven quantum dissipationless spin current in p-doped semiconductorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=70&issue=23&spage=235323:1&epage=8&date=2004&atitle=Effects+of+spin+imbalance+on+the+electric-field-driven+quantum+dissipationless+spin+current+in+p-doped+semiconductorsen_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.70.235323en_HK
dc.identifier.scopuseid_2-s2.0-13944261889en_HK
dc.identifier.hkuros97383-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-13944261889&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume70en_HK
dc.identifier.issue23en_HK
dc.identifier.spage1en_HK
dc.identifier.epage8en_HK
dc.identifier.isiWOS:000226112100102-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHu, L=7401557353en_HK
dc.identifier.scopusauthoridGao, J=37262424300en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK

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