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Article: Cathodoluminescence from interband transitions in germanium (111) and gallium arsenide (100) crystals

TitleCathodoluminescence from interband transitions in germanium (111) and gallium arsenide (100) crystals
Authors
KeywordsPhysics
Issue Date1995
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B, 1995, v. 52 n. 3, p. 1452-1455 How to Cite?
AbstractThe cathodoluminescence spectra in n-type Ge(111) and semi-insulating (SI) GaAs(100) were measured in the range 2.20-5.20 eV. We observed five structures at 3.05, 3.22, 3.60, 3.90, and 4.30 eV in n-type germanium which are assigned to interband transitions. These results are similar to those of previous works on p-type Ge(111). For SI GaAs, the five structures observed at 2.95, 3.26, 3.88, 4.28, and 4.96 eV also indicate electron-hole recombination transitions between bands. All these results agree with the predictions of theoretical calculations. For lightly doped germanium, it is observed that the band structure does not depend on doping type. © 1995 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/43438
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXu, XLen_HK
dc.contributor.authorHao, LYen_HK
dc.contributor.authorXu, KZen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-03-23T04:45:42Z-
dc.date.available2007-03-23T04:45:42Z-
dc.date.issued1995en_HK
dc.identifier.citationPhysical Review B, 1995, v. 52 n. 3, p. 1452-1455en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43438-
dc.description.abstractThe cathodoluminescence spectra in n-type Ge(111) and semi-insulating (SI) GaAs(100) were measured in the range 2.20-5.20 eV. We observed five structures at 3.05, 3.22, 3.60, 3.90, and 4.30 eV in n-type germanium which are assigned to interband transitions. These results are similar to those of previous works on p-type Ge(111). For SI GaAs, the five structures observed at 2.95, 3.26, 3.88, 4.28, and 4.96 eV also indicate electron-hole recombination transitions between bands. All these results agree with the predictions of theoretical calculations. For lightly doped germanium, it is observed that the band structure does not depend on doping type. © 1995 The American Physical Society.en_HK
dc.format.extent646689 bytes-
dc.format.extent14571 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review Ben_HK
dc.rightsPhysical Review B (Condensed Matter). Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleCathodoluminescence from interband transitions in germanium (111) and gallium arsenide (100) crystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=52&issue=3&spage=1452&epage=1455&date=1995&atitle=Cathodoluminescence+from+interband+transitions+in+germanium+(111)+and+gallium+arsenide+(100)+crystalsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.52.1452en_HK
dc.identifier.scopuseid_2-s2.0-35949007235en_HK
dc.identifier.hkuros9275-
dc.identifier.volume52en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1452en_HK
dc.identifier.epage1455en_HK
dc.identifier.isiWOS:A1995RL52500010-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, XL=35188165400en_HK
dc.identifier.scopusauthoridHao, LY=22961479000en_HK
dc.identifier.scopusauthoridXu, KZ=7403281989en_HK
dc.identifier.scopusauthoridChen, TP=27169708800en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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