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Article: Conductance modulations in spin field-effect transistors under finite bias voltages

TitleConductance modulations in spin field-effect transistors under finite bias voltages
Authors
KeywordsPhysics
Issue Date2004
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2004, v. 69 n. 16, p. 165304-1-165304-8 How to Cite?
AbstractThe conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only on the gate-voltage controlled Rashba spin-orbit coupling but also on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.
Persistent Identifierhttp://hdl.handle.net/10722/43421
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHu, Len_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorShen, SQen_HK
dc.date.accessioned2007-03-23T04:45:22Z-
dc.date.available2007-03-23T04:45:22Z-
dc.date.issued2004en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2004, v. 69 n. 16, p. 165304-1-165304-8en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43421-
dc.description.abstractThe conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession states of injected spin-polarized electrons in the semiconductor channel of the device will depend not only on the gate-voltage controlled Rashba spin-orbit coupling but also on the bias voltage and, hence, the conductance modulation in the device due to Rashba spin-orbit coupling may also depend sensitively on the bias voltage.en_HK
dc.format.extent126536 bytes-
dc.format.extent30720 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleConductance modulations in spin field-effect transistors under finite bias voltagesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=69&issue=16&spage=165304:1&epage=8&date=2004&atitle=Conductance+modulations+in+spin+field-effect+transistors+under+finite+bias+voltagesen_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.69.165304en_HK
dc.identifier.scopuseid_2-s2.0-42749100588en_HK
dc.identifier.hkuros88890-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-42749100588&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume69en_HK
dc.identifier.issue16en_HK
dc.identifier.spage165304en_HK
dc.identifier.epage1en_HK
dc.identifier.isiWOS:000221427100055-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHu, L=7401557353en_HK
dc.identifier.scopusauthoridGao, J=37262424300en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK

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