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Article: Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures

TitleDynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures
Authors
KeywordsPhysics
Issue Date2004
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2004, v. 69 n. 12, p. 125308:1-7 How to Cite?
AbstractUsing the general current-conserving theory developed by Buttiker for ac transport, the dynamical conductance of InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures are calculated within the two-band k·p model. In these interband systems, there is an energy window ΔE within which the transmission coefficient is nonzero. When the frequency of the external bias is comparable to this energy window, the real part of the dynamical conductance shows a series of plateaus that are well correlated with the profile of the transmission coefficient. The number and positions of the plateaus can be varied by changing the frequency. At frequencies much smaller than ΔE, the phase of the dynamical conductance is well described by the emittance. As the frequency is increased, the capacitivelike and inductivelike behaviors observed at off-resonance and on-resonance, respectively, are enhanced.
Persistent Identifierhttp://hdl.handle.net/10722/43412
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, PWen_HK
dc.contributor.authorWang, Jen_HK
dc.date.accessioned2007-03-23T04:45:12Z-
dc.date.available2007-03-23T04:45:12Z-
dc.date.issued2004en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2004, v. 69 n. 12, p. 125308:1-7en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43412-
dc.description.abstractUsing the general current-conserving theory developed by Buttiker for ac transport, the dynamical conductance of InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures are calculated within the two-band k·p model. In these interband systems, there is an energy window ΔE within which the transmission coefficient is nonzero. When the frequency of the external bias is comparable to this energy window, the real part of the dynamical conductance shows a series of plateaus that are well correlated with the profile of the transmission coefficient. The number and positions of the plateaus can be varied by changing the frequency. At frequencies much smaller than ΔE, the phase of the dynamical conductance is well described by the emittance. As the frequency is increased, the capacitivelike and inductivelike behaviors observed at off-resonance and on-resonance, respectively, are enhanced.en_HK
dc.format.extent118391 bytes-
dc.format.extent25600 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleDynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structuresen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=69&issue=12&spage=125308:1&epage=7&date=2004&atitle=Dynamical+conductance+through+InAs/GaSb/InAs+and+InAs/AlSb/GaSb/AlSb/InAs+structuresen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.69.125308en_HK
dc.identifier.scopuseid_2-s2.0-2342434013-
dc.identifier.hkuros85816-
dc.identifier.isiWOS:000221259000071-

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