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Article: Electronic transport through single-wall nicked carbon nanotubes

TitleElectronic transport through single-wall nicked carbon nanotubes
Authors
KeywordsPhysics
Issue Date2004
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2004, v. 69 n. 3, p. 033306:1-4 How to Cite?
AbstractWe investigate the electronic transport properties of single wall nicked carbon nanotube (SWNT) using a tight-binding model. In particular, the conductance, emittance, and local density of states of the nicked SWNT are calculated. The resonance structures at all energy levels depend, as expected, on the specific configuration of the system. Two transmissive eigenchannels through the system are separated and examined in detail. Several nicking strengths are considered and quantum dot behavior has been found only for heavily nicked carbon nanotubes. Furthermore, the interesting properties of the emittance of the nicked SWNT is discussed.
Persistent Identifierhttp://hdl.handle.net/10722/43409
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorRen, Wen_HK
dc.contributor.authorWang, Jen_HK
dc.date.accessioned2007-03-23T04:45:09Z-
dc.date.available2007-03-23T04:45:09Z-
dc.date.issued2004en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2004, v. 69 n. 3, p. 033306:1-4en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43409-
dc.description.abstractWe investigate the electronic transport properties of single wall nicked carbon nanotube (SWNT) using a tight-binding model. In particular, the conductance, emittance, and local density of states of the nicked SWNT are calculated. The resonance structures at all energy levels depend, as expected, on the specific configuration of the system. Two transmissive eigenchannels through the system are separated and examined in detail. Several nicking strengths are considered and quantum dot behavior has been found only for heavily nicked carbon nanotubes. Furthermore, the interesting properties of the emittance of the nicked SWNT is discussed.en_HK
dc.format.extent323268 bytes-
dc.format.extent25600 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleElectronic transport through single-wall nicked carbon nanotubesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=69&issue=3&spage=033306:1&epage=4&date=2004&atitle=Electronic+transport+through+single-wall+nicked+carbon+nanotubesen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.69.033306en_HK
dc.identifier.scopuseid_2-s2.0-1442337391-
dc.identifier.hkuros85631-
dc.identifier.isiWOS:000188883800013-

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