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Article: Epitaxial YBa/sub 2/Cu/sub 3/O/sub y/ thin films grown on silicon with a double buffer of Eu/sub 2/CuO/sub 4//YSZ

TitleEpitaxial YBa/sub 2/Cu/sub 3/O/sub y/ thin films grown on silicon with a double buffer of Eu/sub 2/CuO/sub 4//YSZ
Authors
Gao, JKang, LLi, TKCheung, YLYang, J
KeywordsHigh temperature superconductors
Materials processing
Sputtering
Superconducting films
Issue Date2003
PublisherIEEE.
Citation
IEEE Transactions on Applied Superconductivity, 2003, v. 13 n. 2 pt 3, p. 2729-2732 How to Cite?
DOI: http://dx.doi.org/10.1109/TASC.2003.811969
AbstractWe report a double buffer of Eu/sub 2/CuO/sub 4/ (ECO)/YSZ to improve the growth of YBa/sub 2/Cu/sub 3/O/sub y/(YBCO) on Si wafer. The ECO buffer material possesses a very stable 214-T' structure. It has excellent structural and chemical compatibilities with YBCO and YSZ. Our study showed that the epitaxy and crystallinity of YBCO deposited on Si could be considerably enhanced by using such a double buffer of ECO/YSZ. The grown films were characterized by grazing incidence X-ray reflection, rocking curve, SEM, TEM, and surface profiler. It was also found that such a double buffer could lead to a very smooth surface in the YBCO layer.
Persistent Identifierhttp://hdl.handle.net/10722/43392
ISSN
1051-8223
2023 Impact Factor: 1.7
2023 SCImago Journal Rankings: 0.500
ISI Accession Number ID
WOS:000184242400074

 

DC FieldValueLanguage
dc.contributor.authorGao, Jen_HK
dc.contributor.authorKang, Len_HK
dc.contributor.authorLi, TKen_HK
dc.contributor.authorCheung, YLen_HK
dc.contributor.authorYang, Jen_HK
dc.date.accessioned2007-03-23T04:44:50Z-
dc.date.available2007-03-23T04:44:50Z-
dc.date.issued2003en_HK
dc.identifier.citationIEEE Transactions on Applied Superconductivity, 2003, v. 13 n. 2 pt 3, p. 2729-2732en_HK
dc.identifier.issn1051-8223en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43392-
dc.description.abstractWe report a double buffer of Eu/sub 2/CuO/sub 4/ (ECO)/YSZ to improve the growth of YBa/sub 2/Cu/sub 3/O/sub y/(YBCO) on Si wafer. The ECO buffer material possesses a very stable 214-T' structure. It has excellent structural and chemical compatibilities with YBCO and YSZ. Our study showed that the epitaxy and crystallinity of YBCO deposited on Si could be considerably enhanced by using such a double buffer of ECO/YSZ. The grown films were characterized by grazing incidence X-ray reflection, rocking curve, SEM, TEM, and surface profiler. It was also found that such a double buffer could lead to a very smooth surface in the YBCO layer.en_HK
dc.format.extent1242838 bytes-
dc.format.extent30720 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Transactions on Applied Superconductivity-
dc.rights©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectHigh temperature superconductors-
dc.subjectMaterials processing-
dc.subjectSputtering-
dc.subjectSuperconducting films-
dc.titleEpitaxial YBa/sub 2/Cu/sub 3/O/sub y/ thin films grown on silicon with a double buffer of Eu/sub 2/CuO/sub 4//YSZen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1051-8223&volume=13&issue=2 pt 3&spage=2729&epage=2732&date=2003&atitle=Epitaxial+YBa/sub+2/Cu/sub+3/O/sub+y/+thin+films+grown+on+silicon+with+a+double+buffer+of+Eu/sub+2/CuO/sub+4//YSZen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/TASC.2003.811969en_HK
dc.identifier.scopuseid_2-s2.0-0041474608-
dc.identifier.hkuros80023-
dc.identifier.isiWOS:000184242400074-
dc.identifier.issnl1051-8223-

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