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Article: Theory of electric-field-induced metal-insulator transition in doped manganites

TitleTheory of electric-field-induced metal-insulator transition in doped manganites
Authors
KeywordsPhysics
Issue Date2003
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2003, v. 67 n. 15, p. 1531011-1531014 How to Cite?
AbstractThe insulator to metal transition (IMT) induced by the application of an electric field in doped manganites is investigated theoretically. Starting from the double-exchange mechanism with the long-range Coulomb interaction included, we find that the electric field may suppress the charge ordering and drive the system from the antiferromagnetic and charge-ordered state with an energy gap at the Fermi level to the ferromagnetic and gapless state, resulting in the IMT. A numerical simulation is performed for manganite films with intrinsic inhomogeneities, and an important impact of the inhomogeneities on this electric-field-induced transition is obtained. Our results can naturally account for the recently observed electric-filed-induced IMT phenomenon in manganites.
Persistent Identifierhttp://hdl.handle.net/10722/43384
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGu, RYen_HK
dc.contributor.authorWang, ZDen_HK
dc.contributor.authorTing, CSen_HK
dc.date.accessioned2007-03-23T04:44:41Z-
dc.date.available2007-03-23T04:44:41Z-
dc.date.issued2003en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2003, v. 67 n. 15, p. 1531011-1531014en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43384-
dc.description.abstractThe insulator to metal transition (IMT) induced by the application of an electric field in doped manganites is investigated theoretically. Starting from the double-exchange mechanism with the long-range Coulomb interaction included, we find that the electric field may suppress the charge ordering and drive the system from the antiferromagnetic and charge-ordered state with an energy gap at the Fermi level to the ferromagnetic and gapless state, resulting in the IMT. A numerical simulation is performed for manganite films with intrinsic inhomogeneities, and an important impact of the inhomogeneities on this electric-field-induced transition is obtained. Our results can naturally account for the recently observed electric-filed-induced IMT phenomenon in manganites.en_HK
dc.format.extent69158 bytes-
dc.format.extent45056 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleTheory of electric-field-induced metal-insulator transition in doped manganitesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=67&issue=15&spage=153101:1&epage=4&date=2003&atitle=Theory+of+electric-field-induced+metal-insulator+transition+in+doped+manganitesen_HK
dc.identifier.emailWang, ZD: zwang@hkucc.hku.hken_HK
dc.identifier.authorityWang, ZD=rp00802en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.67.153101en_HK
dc.identifier.scopuseid_2-s2.0-0037495124en_HK
dc.identifier.hkuros77178-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037495124&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume67en_HK
dc.identifier.issue15en_HK
dc.identifier.spage1531011en_HK
dc.identifier.epage1531014en_HK
dc.identifier.isiWOS:000182741400001-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGu, RY=7102993987en_HK
dc.identifier.scopusauthoridWang, ZD=14828459100en_HK
dc.identifier.scopusauthoridTing, CS=7202187179en_HK

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