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Article: Quantum spin field effect transistor

TitleQuantum spin field effect transistor
Authors
KeywordsPhysics
Issue Date2003
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2003, v. 67 n. 9, p. 092408:1-4 How to Cite?
AbstractWe propose, theoretically, a type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without magnetic material, but with the help of a spin flip mechanism provided by a rotating external magnetic field. The SFET generates a constant instantaneous spin current that is sensitively controllable by a gate voltage as well as by the frequency and strength of the rotating field. The characteristics of a carbon nanotube based SFET is provided as an example.
Persistent Identifierhttp://hdl.handle.net/10722/43375
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Ben_HK
dc.contributor.authorWang, Jen_HK
dc.contributor.authorGuo, Hen_HK
dc.date.accessioned2007-03-23T04:44:31Z-
dc.date.available2007-03-23T04:44:31Z-
dc.date.issued2003en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2003, v. 67 n. 9, p. 092408:1-4en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43375-
dc.description.abstractWe propose, theoretically, a type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without magnetic material, but with the help of a spin flip mechanism provided by a rotating external magnetic field. The SFET generates a constant instantaneous spin current that is sensitively controllable by a gate voltage as well as by the frequency and strength of the rotating field. The characteristics of a carbon nanotube based SFET is provided as an example.en_HK
dc.format.extent137494 bytes-
dc.format.extent25600 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleQuantum spin field effect transistoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=67&issue=9&spage=092408:1&epage=4&date=2003&atitle=Quantum+spin+field+effect+transistoren_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.67.092408en_HK
dc.identifier.scopuseid_2-s2.0-0037367973-
dc.identifier.hkuros76228-
dc.identifier.isiWOS:000182019300018-

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