File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Quantum spin field effect transistor

TitleQuantum spin field effect transistor
Authors
Wang, BWang, JGuo, H
KeywordsPhysics
Issue Date2003
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter), 2003, v. 67 n. 9, article no. 092408 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.67.092408
AbstractWe propose, theoretically, a type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without magnetic material, but with the help of a spin flip mechanism provided by a rotating external magnetic field. The SFET generates a constant instantaneous spin current that is sensitively controllable by a gate voltage as well as by the frequency and strength of the rotating field. The characteristics of a carbon nanotube based SFET is provided as an example.
Persistent Identifierhttp://hdl.handle.net/10722/43375
ISSN
0163-1829
ISI Accession Number ID
WOS:000182019300018

 

DC FieldValueLanguage
dc.contributor.authorWang, Ben_HK
dc.contributor.authorWang, Jen_HK
dc.contributor.authorGuo, Hen_HK
dc.date.accessioned2007-03-23T04:44:31Z-
dc.date.available2007-03-23T04:44:31Z-
dc.date.issued2003en_HK
dc.identifier.citationPhysical Review B (Condensed Matter), 2003, v. 67 n. 9, article no. 092408-
dc.identifier.issn0163-1829-
dc.identifier.urihttp://hdl.handle.net/10722/43375-
dc.description.abstractWe propose, theoretically, a type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without magnetic material, but with the help of a spin flip mechanism provided by a rotating external magnetic field. The SFET generates a constant instantaneous spin current that is sensitively controllable by a gate voltage as well as by the frequency and strength of the rotating field. The characteristics of a carbon nanotube based SFET is provided as an example.en_HK
dc.format.extent137494 bytes-
dc.format.extent25600 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter)-
dc.rightsCopyright 2003 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.67.092408-
dc.subjectPhysicsen_HK
dc.titleQuantum spin field effect transistoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=67&issue=9&spage=092408:1&epage=4&date=2003&atitle=Quantum+spin+field+effect+transistoren_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.67.092408en_HK
dc.identifier.scopuseid_2-s2.0-0037367973-
dc.identifier.hkuros76228-
dc.identifier.volume67-
dc.identifier.issue9-
dc.identifier.spagearticle no. 092408-
dc.identifier.epagearticle no. 092408-
dc.identifier.isiWOS:000182019300018-
dc.identifier.issnl0163-1829-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats