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Article: Defect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopy

TitleDefect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopy
Authors
KeywordsPhysics
Issue Date2001
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2001, v. 64 n. 7, p. 752011-752017 How to Cite?
AbstractDefects in p-type Zn-doped liquid-encapsulated Czochralski - grown GaSb were studied by the positron lifetime technique. The lifetime measurements were performed on the as-grown sample at temperature varying from 15 K to 297 K. A positron trapping center having a characteristic lifetime of 317 ps was identified as the neutral VGa-related defect. Its concentration in the as-grown sample was found to be in the range of 1017-1018 cm-3. At an annealing temperature of 300 °C, the VGa-related defect began annealing out and a new defect capable of trapping positrons was formed. This newly formed defect, having a lifetime value of 379 ps, is attributed to a vacancy - Zn-defect complex. This defect started annealing out at a temperature of 580 °C. A positron shallow trap having binding energy and concentration of 75 meV and 1018 cm-3, respectively, was also observed in the as-grown sample. This shallow trap is attributed to positrons forming hydrogenlike Rydberg states with the ionized dopant acceptor Zn.
Persistent Identifierhttp://hdl.handle.net/10722/43329
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorHuimin, Wen_HK
dc.date.accessioned2007-03-23T04:43:41Z-
dc.date.available2007-03-23T04:43:41Z-
dc.date.issued2001en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2001, v. 64 n. 7, p. 752011-752017en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43329-
dc.description.abstractDefects in p-type Zn-doped liquid-encapsulated Czochralski - grown GaSb were studied by the positron lifetime technique. The lifetime measurements were performed on the as-grown sample at temperature varying from 15 K to 297 K. A positron trapping center having a characteristic lifetime of 317 ps was identified as the neutral VGa-related defect. Its concentration in the as-grown sample was found to be in the range of 1017-1018 cm-3. At an annealing temperature of 300 °C, the VGa-related defect began annealing out and a new defect capable of trapping positrons was formed. This newly formed defect, having a lifetime value of 379 ps, is attributed to a vacancy - Zn-defect complex. This defect started annealing out at a temperature of 580 °C. A positron shallow trap having binding energy and concentration of 75 meV and 1018 cm-3, respectively, was also observed in the as-grown sample. This shallow trap is attributed to positrons forming hydrogenlike Rydberg states with the ionized dopant acceptor Zn.en_HK
dc.format.extent90656 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleDefect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=64&issue=7&spage=075201:1&epage=7&date=2001&atitle=Defect+study+of+Zn-doped+p-type+gallium+antimonide+using+positron+lifetime+spectroscopyen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.64.075201en_HK
dc.identifier.scopuseid_2-s2.0-0035881818en_HK
dc.identifier.hkuros64915-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035881818&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume64en_HK
dc.identifier.issue7en_HK
dc.identifier.spage752011en_HK
dc.identifier.epage752017en_HK
dc.identifier.isiWOS:000170500900050-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridHuimin, W=7801680119en_HK

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