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Article: Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy

TitleIsochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy
Authors
KeywordsPhysics
Issue Date2000
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2000, v. 62 n. 12, p. 8016-8022 How to Cite?
Abstractn-type 6H silicon carbide has been studied using positron lifetime spectroscopy with isochronal annealing temperatures of 400, 650, 900, 1200, and 1400 °C. In the as-grown sample, we have identified the VSi vacancy, the VCVSi divacancy, and probably the VC vacancy. The silicon vacancy and the carbon vacancy were found to anneal out in the temperature range 400-650 °C. The VCVSi divacancy was found to persist at an annealing temperature of 1400 °C.
Persistent Identifierhttp://hdl.handle.net/10722/43297
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-03-23T04:43:06Z-
dc.date.available2007-03-23T04:43:06Z-
dc.date.issued2000en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2000, v. 62 n. 12, p. 8016-8022en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43297-
dc.description.abstractn-type 6H silicon carbide has been studied using positron lifetime spectroscopy with isochronal annealing temperatures of 400, 650, 900, 1200, and 1400 °C. In the as-grown sample, we have identified the VSi vacancy, the VCVSi divacancy, and probably the VC vacancy. The silicon vacancy and the carbon vacancy were found to anneal out in the temperature range 400-650 °C. The VCVSi divacancy was found to persist at an annealing temperature of 1400 °C.en_HK
dc.format.extent107663 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleIsochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=62&issue=12&spage=8016&epage=8022&date=2000&atitle=Isochronal+annealing+studies+of+n-type+6H-SiC+with+positron+lifetime+spectroscopyen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.62.8016en_HK
dc.identifier.scopuseid_2-s2.0-0034664634en_HK
dc.identifier.hkuros55898-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034664634&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume62en_HK
dc.identifier.issue12en_HK
dc.identifier.spage8016en_HK
dc.identifier.epage8022en_HK
dc.identifier.isiWOS:000089593400051-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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