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Article: Interfacial microstructures in ramp type multilayer Josephson junctions studied by TEM

TitleInterfacial microstructures in ramp type multilayer Josephson junctions studied by TEM
Authors
Issue Date1999
PublisherIEEE.
Citation
IEEE Transactions on Applied Superconductivity, 1999, v. 9 n. 2, p. 3145-3148 How to Cite?
AbstractThe microstructures of high Tc ramp type Josephson junctions were studied by using transmission electron microscopy. The work was emphasized at the interfacial defects and the influence of the ramp slope. The results show that for the ramp slope angles of 15°~40°, the epitaxy was still remained through all layers at the ramp region without the formation of big grain boundaries. No amorphous layers and secondary phases were observed at the barrier interfaces. For a gentle ramp junction, small misoriented grains appeared in some portions of the barrier. The substrate ramp formed during the ion etching process had little influence on the growth of the upper layers. In junctions with a steep ramp, defects increased near the interface, although the epitaxy of the barrier was of good quality. The results demonstrate that the slope angle of the junction ramp is an important factor that influences the performance of the Josephson junctions.
Persistent Identifierhttp://hdl.handle.net/10722/43272
ISSN
2015 Impact Factor: 1.092
2015 SCImago Journal Rankings: 0.381
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGao, Jen_HK
dc.contributor.authorYang, Yen_HK
dc.contributor.authorSun, JLen_HK
dc.date.accessioned2007-03-23T04:42:37Z-
dc.date.available2007-03-23T04:42:37Z-
dc.date.issued1999en_HK
dc.identifier.citationIEEE Transactions on Applied Superconductivity, 1999, v. 9 n. 2, p. 3145-3148en_HK
dc.identifier.issn1051-8223en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43272-
dc.description.abstractThe microstructures of high Tc ramp type Josephson junctions were studied by using transmission electron microscopy. The work was emphasized at the interfacial defects and the influence of the ramp slope. The results show that for the ramp slope angles of 15°~40°, the epitaxy was still remained through all layers at the ramp region without the formation of big grain boundaries. No amorphous layers and secondary phases were observed at the barrier interfaces. For a gentle ramp junction, small misoriented grains appeared in some portions of the barrier. The substrate ramp formed during the ion etching process had little influence on the growth of the upper layers. In junctions with a steep ramp, defects increased near the interface, although the epitaxy of the barrier was of good quality. The results demonstrate that the slope angle of the junction ramp is an important factor that influences the performance of the Josephson junctions.en_HK
dc.format.extent1226320 bytes-
dc.format.extent30720 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleInterfacial microstructures in ramp type multilayer Josephson junctions studied by TEMen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1051-8223&volume=9&issue=2&spage=3145&epage=3148&date=1999&atitle=Interfacial+microstructures+in+ramp+type+multilayer+Josephson+junctions+studied+by+TEMen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/77.783696en_HK
dc.identifier.scopuseid_2-s2.0-0032663488-
dc.identifier.hkuros47347-
dc.identifier.isiWOS:000081964500076-

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