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Article: Ultrathin films of YBaCuO grown on YSZ substrates with a new buffer layer Nd-Cu-O

TitleUltrathin films of YBaCuO grown on YSZ substrates with a new buffer layer Nd-Cu-O
Authors
Issue Date1999
PublisherIEEE.
Citation
IEEE Transactions on Applied Superconductivity, 1999, v. 9 n. 2, p. 1661-1664 How to Cite?
AbstractYSZ is one of the most widely used substrates to grow oxide superconducting thin films. However, the large lattice mismatch and occurrence of intermediate layer often degrade the quality of grown films. We used a new buffer material, neodymium copper oxide (Nd2 CuO4), to improve the quality of YBCO ultrathin films grown on YSZ. Good superconducting transitions have been obtained on these films with thickness 10-12 nanometers. Such a Nd2CuO 4 layer has a stable crystal structure and behaves as an oxide semiconductor. At 77 K, its resistivity is ~40 times higher than that of PrBaCuO, which has been commonly used as buffer layer and barrier material. The lattice mismatch between Nd2CuO4 and YBCO is much smaller than that between YSZ and YBCO. It allows highly epitaxial growth of YBCO without forming big defects and the intermediate layer. Measurements by using XRD, rocking curve, and cross-sectional TEM indicated that the crystallinity of YBCO films grown on Nd2CuO4 buffer layer had been significantly improved. Besides, the smooth surface of Nd2CuO4 layer and buffered YBCO films are observed by SEM.
Persistent Identifierhttp://hdl.handle.net/10722/43269
ISSN
2015 Impact Factor: 1.092
2015 SCImago Journal Rankings: 0.381
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGao, Jen_HK
dc.contributor.authorChui, TCen_HK
dc.contributor.authorTang, WHen_HK
dc.date.accessioned2007-03-23T04:42:33Z-
dc.date.available2007-03-23T04:42:33Z-
dc.date.issued1999en_HK
dc.identifier.citationIEEE Transactions on Applied Superconductivity, 1999, v. 9 n. 2, p. 1661-1664en_HK
dc.identifier.issn1051-8223en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43269-
dc.description.abstractYSZ is one of the most widely used substrates to grow oxide superconducting thin films. However, the large lattice mismatch and occurrence of intermediate layer often degrade the quality of grown films. We used a new buffer material, neodymium copper oxide (Nd2 CuO4), to improve the quality of YBCO ultrathin films grown on YSZ. Good superconducting transitions have been obtained on these films with thickness 10-12 nanometers. Such a Nd2CuO 4 layer has a stable crystal structure and behaves as an oxide semiconductor. At 77 K, its resistivity is ~40 times higher than that of PrBaCuO, which has been commonly used as buffer layer and barrier material. The lattice mismatch between Nd2CuO4 and YBCO is much smaller than that between YSZ and YBCO. It allows highly epitaxial growth of YBCO without forming big defects and the intermediate layer. Measurements by using XRD, rocking curve, and cross-sectional TEM indicated that the crystallinity of YBCO films grown on Nd2CuO4 buffer layer had been significantly improved. Besides, the smooth surface of Nd2CuO4 layer and buffered YBCO films are observed by SEM.en_HK
dc.format.extent825033 bytes-
dc.format.extent30720 bytes-
dc.format.extent514928 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeimage/jpeg-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleUltrathin films of YBaCuO grown on YSZ substrates with a new buffer layer Nd-Cu-Oen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1051-8223&volume=9&issue=2&spage=1661&epage=1664&date=1999&atitle=Ultrathin+films+of+YBaCuO+grown+on+YSZ+substrates+with+a+new+buffer+layer+Nd-Cu-Oen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/77.784751en_HK
dc.identifier.scopuseid_2-s2.0-0032682823-
dc.identifier.hkuros47344-
dc.identifier.isiWOS:000081964300060-

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