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Article: Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFET's

TitleReproducibility of transmission line measurement of bipolar I-V characteristics of MOSFET's
Authors
Chen, TPChan, RFung, SLo, KF
Issue Date1999
PublisherIEEE.
Citation
Ieee Transactions On Instrumentation And Measurement, 1999, v. 48 n. 3, p. 721-723 How to Cite?
DOI: http://dx.doi.org/10.1109/19.772206
AbstractReproducibility of transmission line (TL) measurement of bipolar current-voltage (I-V) characteristics of grounded gate MOSFET's has been examined. It is observed that the reproducibility is related to the duration of the pulses generated by the transmission line, and a longer pulse duration gives a better reproducibility. For a short pulse duration, it is more difficult to reproduce the I-V characteristics in the triggering region than in other regions (i.e., the pretriggering and snapback regions).
Persistent Identifierhttp://hdl.handle.net/10722/43266
ISSN
0018-9456
2023 Impact Factor: 5.6
2023 SCImago Journal Rankings: 1.536
ISI Accession Number ID
WOS:000081299100009
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorChan, Ren_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLo, KFen_HK
dc.date.accessioned2007-03-23T04:42:29Z-
dc.date.available2007-03-23T04:42:29Z-
dc.date.issued1999en_HK
dc.identifier.citationIeee Transactions On Instrumentation And Measurement, 1999, v. 48 n. 3, p. 721-723en_HK
dc.identifier.issn0018-9456en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43266-
dc.description.abstractReproducibility of transmission line (TL) measurement of bipolar current-voltage (I-V) characteristics of grounded gate MOSFET's has been examined. It is observed that the reproducibility is related to the duration of the pulses generated by the transmission line, and a longer pulse duration gives a better reproducibility. For a short pulse duration, it is more difficult to reproduce the I-V characteristics in the triggering region than in other regions (i.e., the pretriggering and snapback regions).en_HK
dc.format.extent60413 bytes-
dc.format.extent14571 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Transactions on Instrumentation and Measurementen_HK
dc.rights©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleReproducibility of transmission line measurement of bipolar I-V characteristics of MOSFET'sen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9456&volume=48&issue=3&spage=721&epage=723&date=1999&atitle=Reproducibility+of+transmission+line+measurement+of+bipolar+I-V+characteristics+of+MOSFETsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/19.772206en_HK
dc.identifier.scopuseid_2-s2.0-0032659235en_HK
dc.identifier.hkuros41287-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032659235&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume48en_HK
dc.identifier.issue3en_HK
dc.identifier.spage721en_HK
dc.identifier.epage723en_HK
dc.identifier.isiWOS:000081299100009-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=27169708800en_HK
dc.identifier.scopusauthoridChan, R=7403110832en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLo, KF=7402101523en_HK
dc.identifier.issnl0018-9456-

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