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Article: Dynamical mean-field solution for a model of metal-insulator transitions in moderately doped manganites

TitleDynamical mean-field solution for a model of metal-insulator transitions in moderately doped manganites
Authors
KeywordsPhysics
Issue Date1998
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 1998, v. 58 n. 23, p. 15310-15313 How to Cite?
AbstractWe propose that a specific spatial configuration of lattice sites that energetically favor 3 + or 4 + Mn ions in moderately doped manganites constitutes approximately a spatially random two-energy-level system. Such an effect results in a mechanism of metal-insulator transitions that appears to be different from both the Anderson transition and the Mott-Hubbard transition. Correspondingly, a disordered Kondo lattice model is put forward, whose dynamical mean-field solution agrees reasonably with experiments.
Persistent Identifierhttp://hdl.handle.net/10722/43256
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhong, Fen_HK
dc.contributor.authorDong, Jen_HK
dc.contributor.authorWang, ZDen_HK
dc.date.accessioned2007-03-23T04:42:17Z-
dc.date.available2007-03-23T04:42:17Z-
dc.date.issued1998en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 1998, v. 58 n. 23, p. 15310-15313en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43256-
dc.description.abstractWe propose that a specific spatial configuration of lattice sites that energetically favor 3 + or 4 + Mn ions in moderately doped manganites constitutes approximately a spatially random two-energy-level system. Such an effect results in a mechanism of metal-insulator transitions that appears to be different from both the Anderson transition and the Mott-Hubbard transition. Correspondingly, a disordered Kondo lattice model is put forward, whose dynamical mean-field solution agrees reasonably with experiments.en_HK
dc.format.extent105448 bytes-
dc.format.extent45056 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter). Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleDynamical mean-field solution for a model of metal-insulator transitions in moderately doped manganitesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=58&issue=23&spage=15310&epage=15313&date=1998&atitle=Dynamical+mean-field+solution+for+a+model+of+metal-insulator+transitions+in+moderately+doped+manganitesen_HK
dc.identifier.emailWang, ZD: zwang@hkucc.hku.hken_HK
dc.identifier.authorityWang, ZD=rp00802en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.58.15310en_HK
dc.identifier.scopuseid_2-s2.0-0001421468en_HK
dc.identifier.hkuros39333-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001421468&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume58en_HK
dc.identifier.issue23en_HK
dc.identifier.spage15310en_HK
dc.identifier.epage15313en_HK
dc.identifier.isiWOS:000077542100008-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhong, F=7102244612en_HK
dc.identifier.scopusauthoridDong, J=7403365671en_HK
dc.identifier.scopusauthoridWang, ZD=14828459100en_HK

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