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Article: Post-stress interface trap generation induced by oxide-field stress with FN injection

TitlePost-stress interface trap generation induced by oxide-field stress with FN injection
Authors
Chen, TPLi, SFung, SBaling, CDLo, KF
KeywordsIntegrated circuit reliability
Mos devices
Mosfet's
Semiconductor device reliability
Silicon materials/ devices
Issue Date1998
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1998, v. 45 n. 9, p. 1972-1977 How to Cite?
DOI: http://dx.doi.org/10.1109/16.711363
AbstractInterface trap generation in nMOS transistors during both stressing and post-stress periods under the conditions of oxide field (dynamic and dc) stress with FN injection is investigated with charge pumping technique. In contrast to the post-stress interface trap generation induced by hot carrier stress which is a logarithmical function of post-stress time, the poststress interface trap generation induced by oxide-field stress with FN injection first increases with post-stress time but then becomes saturated. The mechanisms for the interface trap generation in both stressing and post-stress periods are described. © 1998 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/43238
ISSN
0018-9383
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID
WOS:000075486100016
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLi, Sen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBaling, CDen_HK
dc.contributor.authorLo, KFen_HK
dc.date.accessioned2007-03-23T04:41:57Z-
dc.date.available2007-03-23T04:41:57Z-
dc.date.issued1998en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 1998, v. 45 n. 9, p. 1972-1977en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43238-
dc.description.abstractInterface trap generation in nMOS transistors during both stressing and post-stress periods under the conditions of oxide field (dynamic and dc) stress with FN injection is investigated with charge pumping technique. In contrast to the post-stress interface trap generation induced by hot carrier stress which is a logarithmical function of post-stress time, the poststress interface trap generation induced by oxide-field stress with FN injection first increases with post-stress time but then becomes saturated. The mechanisms for the interface trap generation in both stressing and post-stress periods are described. © 1998 IEEE.en_HK
dc.format.extent77800 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectIntegrated circuit reliabilityen_HK
dc.subjectMos devicesen_HK
dc.subjectMosfet'sen_HK
dc.subjectSemiconductor device reliabilityen_HK
dc.subjectSilicon materials/ devicesen_HK
dc.titlePost-stress interface trap generation induced by oxide-field stress with FN injectionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=45&issue=9&spage=1972&epage=1977&date=1998&atitle=Post-stress+interface+trap+generation+induced+by+oxide-field+stress+with+FN+injectionen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBaling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBaling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/16.711363en_HK
dc.identifier.scopuseid_2-s2.0-0032166006en_HK
dc.identifier.hkuros38907-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032166006&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume45en_HK
dc.identifier.issue9en_HK
dc.identifier.spage1972en_HK
dc.identifier.epage1977en_HK
dc.identifier.isiWOS:000075486100016-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=27169708800en_HK
dc.identifier.scopusauthoridLi, S=7409241368en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBaling, CD=7005864180en_HK
dc.identifier.scopusauthoridLo, KF=7402101523en_HK
dc.identifier.issnl0018-9383-

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