File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Antiferromagnetism and phase separation in electronic models for doped transition-metal oxides

TitleAntiferromagnetism and phase separation in electronic models for doped transition-metal oxides
Authors
KeywordsPhysics
Issue Date1998
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 1998, v. 58 n. 14, p. R8877-R8880 How to Cite?
AbstractWe investigate the ground state properties of electronic models for doped transition-metal oxides. An effective t-J like Hamiltonian is derived from the case of strong Hund coupling between the conduction electrons and localized spins by means of the projection technique. An attractive interaction for conduction electrons and an antiferromagnetic coupling of the localized spin are obtained. A large ratio of the attraction to effective electron hopping, which is modulated by the spin background, will lead to the phase separation. The antiferromagnetic phase and the phase separation appear in the case of either high or low density of electrons. The possible relevance of the phase separation to the charge stripe phase in doped transition-metal oxides is dicussed.
Persistent Identifierhttp://hdl.handle.net/10722/43236
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShen, SQen_HK
dc.contributor.authorWang, ZDen_HK
dc.date.accessioned2007-03-23T04:41:54Z-
dc.date.available2007-03-23T04:41:54Z-
dc.date.issued1998en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 1998, v. 58 n. 14, p. R8877-R8880en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43236-
dc.description.abstractWe investigate the ground state properties of electronic models for doped transition-metal oxides. An effective t-J like Hamiltonian is derived from the case of strong Hund coupling between the conduction electrons and localized spins by means of the projection technique. An attractive interaction for conduction electrons and an antiferromagnetic coupling of the localized spin are obtained. A large ratio of the attraction to effective electron hopping, which is modulated by the spin background, will lead to the phase separation. The antiferromagnetic phase and the phase separation appear in the case of either high or low density of electrons. The possible relevance of the phase separation to the charge stripe phase in doped transition-metal oxides is dicussed.en_HK
dc.format.extent115969 bytes-
dc.format.extent45056 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter). Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleAntiferromagnetism and phase separation in electronic models for doped transition-metal oxidesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=58&issue=14&spage=R8877&epage=R8880&date=1998&atitle=Antiferromagnetism+and+phase+separation+in+electronic+models+for+doped+transition-metal+oxidesen_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.emailWang, ZD: zwang@hkucc.hku.hken_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.identifier.authorityWang, ZD=rp00802en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.58.R8877en_HK
dc.identifier.scopuseid_2-s2.0-0000460242en_HK
dc.identifier.hkuros38882-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000460242&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume58en_HK
dc.identifier.issue14en_HK
dc.identifier.spageR8877en_HK
dc.identifier.epageR8880en_HK
dc.identifier.isiWOS:000076486700004-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK
dc.identifier.scopusauthoridWang, ZD=14828459100en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats