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Article: DX-like properties of the EL6 defect family in GaAs

TitleDX-like properties of the EL6 defect family in GaAs
Authors
KeywordsPhysics
Issue Date1998
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 1998, v. 58 n. 3, p. 1358-1366 How to Cite?
AbstractCapacitance-voltage characterization at different temperatures and emission and capture deep-level transient spectroscopy carried out on undoped n-type GaAs lend strong confirmation to the recent suggestion that the EL6 defect arises from a center that is DX-like in nature. The evidence comes from the observation of an anomalous filling pulse duration dependence of the peak intensities of three to four different EL6 sublevels, similar to that recently found for the DX center in Al xGa 1-xAs and attributed to the charge redistribution. In addition, capture transients reveal large capture barriers (0.2-0.3 eV), which are typical of a defect undergoing large lattice relaxation into a deep-lying state. These observations indicate that the EL6 defect center comprises of a center with three to four slightly different ground-state configurations, each one of which forms as a result of some bond-breaking atomic displacement on capture of a second electron at the defect site. The significance of this in understanding the microstructure for the EL6 center is briefly discussed.
Persistent Identifierhttp://hdl.handle.net/10722/43235
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorReddy, CVen_HK
dc.contributor.authorLuo, YLen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-03-23T04:41:53Z-
dc.date.available2007-03-23T04:41:53Z-
dc.date.issued1998en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 1998, v. 58 n. 3, p. 1358-1366en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43235-
dc.description.abstractCapacitance-voltage characterization at different temperatures and emission and capture deep-level transient spectroscopy carried out on undoped n-type GaAs lend strong confirmation to the recent suggestion that the EL6 defect arises from a center that is DX-like in nature. The evidence comes from the observation of an anomalous filling pulse duration dependence of the peak intensities of three to four different EL6 sublevels, similar to that recently found for the DX center in Al xGa 1-xAs and attributed to the charge redistribution. In addition, capture transients reveal large capture barriers (0.2-0.3 eV), which are typical of a defect undergoing large lattice relaxation into a deep-lying state. These observations indicate that the EL6 defect center comprises of a center with three to four slightly different ground-state configurations, each one of which forms as a result of some bond-breaking atomic displacement on capture of a second electron at the defect site. The significance of this in understanding the microstructure for the EL6 center is briefly discussed.en_HK
dc.format.extent180500 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter). Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleDX-like properties of the EL6 defect family in GaAsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=58&issue=3&spage=1358&epage=1366&date=1998&atitle=DX-like+properties+of+the+EL6+defect+family+in+GaAsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.58.1358en_HK
dc.identifier.scopuseid_2-s2.0-0004982518en_HK
dc.identifier.hkuros38881-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0004982518&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume58en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1358en_HK
dc.identifier.epage1366en_HK
dc.identifier.isiWOS:000075039600051-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridReddy, CV=8621657000en_HK
dc.identifier.scopusauthoridLuo, YL=55187936600en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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