File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Low-temperature positron transport in semi-insulating GaAs

TitleLow-temperature positron transport in semi-insulating GaAs
Authors
KeywordsPhysics
Issue Date1997
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 1997, v. 55 n. 15, p. 9897-9903 How to Cite?
AbstractPositron diffusion and drift in semi-insulating (SI) GaAs in the temperature range of 50-300 K were studied by the slow-positron beam technique. Both the temperature-dependent positron diffusion coefficient and positron mobility were measured independently using the method reported recently [Y. Y. Shan et al., Phys. Rev. B 54, 1982 (1996)]. The experimental results are consistent with the Einstein relation. The diffusion coefficient and mobility approximately follow D +(T)=9400T -β cm 2 s -1, and μ +(T)=10 8×T -σ cm 2 V -1 s -1, with β=1.5±0.1, and σ=2.5±0.2, respectively in the temperature range of 50-300 K. The results are consistent with scattering from optical-phonon modes as the dominant scattering process for positron transport in GaAs (SI) in this temperature range. No trapped positron states were observed to 50 K.
Persistent Identifierhttp://hdl.handle.net/10722/43191
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShan, YYen_HK
dc.contributor.authorLynn, KGen_HK
dc.contributor.authorAsokaKumar, Pen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CBen_HK
dc.date.accessioned2007-03-23T04:41:01Z-
dc.date.available2007-03-23T04:41:01Z-
dc.date.issued1997en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 1997, v. 55 n. 15, p. 9897-9903en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43191-
dc.description.abstractPositron diffusion and drift in semi-insulating (SI) GaAs in the temperature range of 50-300 K were studied by the slow-positron beam technique. Both the temperature-dependent positron diffusion coefficient and positron mobility were measured independently using the method reported recently [Y. Y. Shan et al., Phys. Rev. B 54, 1982 (1996)]. The experimental results are consistent with the Einstein relation. The diffusion coefficient and mobility approximately follow D +(T)=9400T -β cm 2 s -1, and μ +(T)=10 8×T -σ cm 2 V -1 s -1, with β=1.5±0.1, and σ=2.5±0.2, respectively in the temperature range of 50-300 K. The results are consistent with scattering from optical-phonon modes as the dominant scattering process for positron transport in GaAs (SI) in this temperature range. No trapped positron states were observed to 50 K.en_HK
dc.format.extent156538 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter). Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleLow-temperature positron transport in semi-insulating GaAsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=55&issue=15&spage=9897&epage=9903&date=1997&atitle=Low-temperature+positron+transport+in+semi-insulating+GaAsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CB: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CB=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.55.9897en_HK
dc.identifier.scopuseid_2-s2.0-0000105631en_HK
dc.identifier.hkuros22228-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000105631&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume55en_HK
dc.identifier.issue15en_HK
dc.identifier.spage9897en_HK
dc.identifier.epage9903en_HK
dc.identifier.isiWOS:A1997WV25100114-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridLynn, KG=7102392474en_HK
dc.identifier.scopusauthoridAsokaKumar, P=7003841018en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CB=7005864180en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats