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Article: Nature of the bulk defects in GaAs through high-temperature quenching studies

TitleNature of the bulk defects in GaAs through high-temperature quenching studies
Authors
KeywordsPhysics
Issue Date1996
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 1996, v. 54 n. 16, p. 11290-11297 How to Cite?
AbstractDeep-level transient spectroscopy has been applied to n-type horizontal gradient freeze grown GaAs that has been subjected to thermal stressing (quenching) and varying degrees of arsenic outdiffusion during rapid thermal annealing. The concentrations and activation energies of the various deep donor levels have been monitored. As a result of the external excitations in the lattice due to the thermal stress (quenching), dramatic effects occur in the defect level structure that could be of importance to device technology. It is found that the native EL6 group of defects is nearly absent in rapid thermally annealed material, while the levels EL5 and EL8 appear with EL3 becoming a dominant level that could act as a recombination center. With the lengthening of annealing time and significant As outdiffusion, there is a general reduction of the EL2, EL3, and EL5 defect concentrations together with a complete removal of EL8. Moreover, the EL2 activation energy may be varied from 0.827 to 0.922 eV by controlling the level of As out-diffusion. These observations are discussed in terms of the As Ga-As i model of the EL2 defect and the V As-V Ga divacancy model for the EL6 group of defects. The EL3, EL5, EL8, and EL15 defect levels seen in samples subjected to rapid thermally quenching are attributed to the breakup of V As-As i Frenkel pair defects known to be present in the as-grown material.
Persistent Identifierhttp://hdl.handle.net/10722/43180
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorReddy, CVen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-03-23T04:40:49Z-
dc.date.available2007-03-23T04:40:49Z-
dc.date.issued1996en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 1996, v. 54 n. 16, p. 11290-11297en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43180-
dc.description.abstractDeep-level transient spectroscopy has been applied to n-type horizontal gradient freeze grown GaAs that has been subjected to thermal stressing (quenching) and varying degrees of arsenic outdiffusion during rapid thermal annealing. The concentrations and activation energies of the various deep donor levels have been monitored. As a result of the external excitations in the lattice due to the thermal stress (quenching), dramatic effects occur in the defect level structure that could be of importance to device technology. It is found that the native EL6 group of defects is nearly absent in rapid thermally annealed material, while the levels EL5 and EL8 appear with EL3 becoming a dominant level that could act as a recombination center. With the lengthening of annealing time and significant As outdiffusion, there is a general reduction of the EL2, EL3, and EL5 defect concentrations together with a complete removal of EL8. Moreover, the EL2 activation energy may be varied from 0.827 to 0.922 eV by controlling the level of As out-diffusion. These observations are discussed in terms of the As Ga-As i model of the EL2 defect and the V As-V Ga divacancy model for the EL6 group of defects. The EL3, EL5, EL8, and EL15 defect levels seen in samples subjected to rapid thermally quenching are attributed to the breakup of V As-As i Frenkel pair defects known to be present in the as-grown material.en_HK
dc.format.extent137305 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleNature of the bulk defects in GaAs through high-temperature quenching studiesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=54&issue=16&spage=11290&epage=11297&date=1996&atitle=Nature+of+the+bulk+defects+in+GaAs+through+high-temperature+quenching+studiesen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.54.11290en_HK
dc.identifier.scopuseid_2-s2.0-0000541408en_HK
dc.identifier.hkuros21115-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000541408&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume54en_HK
dc.identifier.issue16en_HK
dc.identifier.spage11290en_HK
dc.identifier.epage11297en_HK
dc.identifier.isiWOS:A1996VT67500054-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridReddy, CV=8621657000en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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