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Article: Field effect on positron diffusion in semi-insulating GaAs

TitleField effect on positron diffusion in semi-insulating GaAs
Authors
KeywordsPhysics
Issue Date1996
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 1996, v. 54 n. 3, p. 1982-1986 How to Cite?
AbstractAn energy-tunable monoenergetic positron beam was used to study positron diffusion in the space-charge region of an Au/GaAs(SI) (semi-insulating) Schottky contact, where the electric field reaches ∼105 V cm-1 by reverse biasing the diode. An analytical solution of the time-dependent positron drift-diffusion model under an electric field was obtained for the case of a semi-infinite body with a capturing boundary, and explains the experimental results well. A positron diffusion coefficient of 1.8±0.2 cm2 s-1, and a positron mobility of 70± 10 cm2 V-1 s-1 in GaAs(SI) at 300 K, were obtained independently. This result is consistent with the Einstein relation. The dependence of the positron current density at the Au/GaAs interface on the electric field shows that GaAs(SI) is a possible candidate for the fabrication of the field-assisted positron moderator.
Persistent Identifierhttp://hdl.handle.net/10722/43166
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShan, YYen_HK
dc.contributor.authorAsokaKumar, Pen_HK
dc.contributor.authorLynn, KGen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-03-23T04:40:30Z-
dc.date.available2007-03-23T04:40:30Z-
dc.date.issued1996en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 1996, v. 54 n. 3, p. 1982-1986en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43166-
dc.description.abstractAn energy-tunable monoenergetic positron beam was used to study positron diffusion in the space-charge region of an Au/GaAs(SI) (semi-insulating) Schottky contact, where the electric field reaches ∼105 V cm-1 by reverse biasing the diode. An analytical solution of the time-dependent positron drift-diffusion model under an electric field was obtained for the case of a semi-infinite body with a capturing boundary, and explains the experimental results well. A positron diffusion coefficient of 1.8±0.2 cm2 s-1, and a positron mobility of 70± 10 cm2 V-1 s-1 in GaAs(SI) at 300 K, were obtained independently. This result is consistent with the Einstein relation. The dependence of the positron current density at the Au/GaAs interface on the electric field shows that GaAs(SI) is a possible candidate for the fabrication of the field-assisted positron moderator.en_HK
dc.format.extent100776 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsPhysical Review B (Condensed Matter). Copyright © American Physical Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysicsen_HK
dc.titleField effect on positron diffusion in semi-insulating GaAsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=54&spage=1982&epage=1986&date=1996&atitle=Field+effect+on+positron+diffusion+in+semi-insulating+GaAsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.54.1982en_HK
dc.identifier.scopuseid_2-s2.0-0343089748en_HK
dc.identifier.hkuros14451-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0343089748&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume54en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1982en_HK
dc.identifier.epage1986en_HK
dc.identifier.isiWOS:A1996UZ86100087-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridAsokaKumar, P=7003841018en_HK
dc.identifier.scopusauthoridLynn, KG=7102392474en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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