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Article: Metal-to-insulator transition in sputter deposited 3Ni/Al thin films

TitleMetal-to-insulator transition in sputter deposited 3Ni/Al thin films
Authors
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2000, v. 88 n. 5, p. 2609-2616 How to Cite?
AbstractThin films with a 3Ni/1Al atomic ratio were synthesized using low-power dc planar magnetron sputtering from a nickel–aluminum alloy target. Chemical analysis revealed that a significant amount of oxygen was incorporated into the Ni–Al thin films which were prepared under a typical vacuum of ~1×10–5 mbar. These thin films were found to exhibit a prominent temperature dependence of electrical resistance, the magnitude of which diminishes upon increasing the film thickness or the in situ deposition temperature. Cross-sectional transmission electron microscopy revealed a nanocrystalline structure of the films which changes as a function of deposition temperature. Electron diffraction indicates the existence of a single-phase face-centered cubic structure in the nanocrystallites, yet with an enormous expansion of the crystal lattice for the low temperature deposited films when compared with the intermetallic Ni3Al lattice. On raising the deposition temperature or increasing the film thickness, however, the lattice constant gradually declines toward the lattice constant of bulk Ni3Al. An attempt is made to correlate the lattice structures of the crystallites and the electrical properties of the films with the potential influence of the dissolved oxygen in the Ni–Al lattice. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/43035
ISSN
2017 Impact Factor: 2.176
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorNg, HPen_HK
dc.contributor.authorNgan, AHWen_HK
dc.date.accessioned2007-03-23T04:37:21Z-
dc.date.available2007-03-23T04:37:21Z-
dc.date.issued2000en_HK
dc.identifier.citationJournal of Applied Physics, 2000, v. 88 n. 5, p. 2609-2616-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43035-
dc.description.abstractThin films with a 3Ni/1Al atomic ratio were synthesized using low-power dc planar magnetron sputtering from a nickel–aluminum alloy target. Chemical analysis revealed that a significant amount of oxygen was incorporated into the Ni–Al thin films which were prepared under a typical vacuum of ~1×10–5 mbar. These thin films were found to exhibit a prominent temperature dependence of electrical resistance, the magnitude of which diminishes upon increasing the film thickness or the in situ deposition temperature. Cross-sectional transmission electron microscopy revealed a nanocrystalline structure of the films which changes as a function of deposition temperature. Electron diffraction indicates the existence of a single-phase face-centered cubic structure in the nanocrystallites, yet with an enormous expansion of the crystal lattice for the low temperature deposited films when compared with the intermetallic Ni3Al lattice. On raising the deposition temperature or increasing the film thickness, however, the lattice constant gradually declines toward the lattice constant of bulk Ni3Al. An attempt is made to correlate the lattice structures of the crystallites and the electrical properties of the films with the potential influence of the dissolved oxygen in the Ni–Al lattice. © 2000 American Institute of Physics.en_HK
dc.format.extent233592 bytes-
dc.format.extent40924 bytes-
dc.format.extent310 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physics-
dc.rightsCopyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2000, v. 88 n. 5, p. 2609-2616 and may be found at https://doi.org/10.1063/1.1286773-
dc.subjectPhysics engineeringen_HK
dc.titleMetal-to-insulator transition in sputter deposited 3Ni/Al thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=88&issue=5&spage=2609&epage=2616&date=2000&atitle=Metal-to-insulator+transition+in+sputter+deposited+3Ni/Al+thin+filmsen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1286773en_HK
dc.identifier.hkuros58574-
dc.identifier.volume88-
dc.identifier.issue5-
dc.identifier.spage2609-
dc.identifier.epage2616-
dc.identifier.isiWOS:000088796500070-

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