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Article: Electrooptic and electroabsorptive modulation properties in interdiffusion-modified AlGaAs-GaAs quantum wells

TitleElectrooptic and electroabsorptive modulation properties in interdiffusion-modified AlGaAs-GaAs quantum wells
Authors
Issue Date1995
PublisherIEEE.
Citation
Ieee Photonics Technology Letters, 1995, v. 7 n. 8, p. 881-883 How to Cite?
AbstractThe electric field induced refractive index change and absorption coefficient change in TE polarization are analyzed at room temperature for several interdiffusion modified Al0.3Ga0.7As-GaAs quantum-well structures. The results show that for the small and medium interdiffusion lengths with fields of 100 and 50 kV/cm, respectively, improved chirping and electroabsorption can be obtained. Further, in a selected set of interdiffusion lengths and fields, the material can be used for an electroabsorption modulator with reduced chirping in a wide range of operation wavelengths (758-874 nm).
Persistent Identifierhttp://hdl.handle.net/10722/42981
ISSN
2015 Impact Factor: 1.945
2015 SCImago Journal Rankings: 1.433
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, EHerberten_HK
dc.contributor.authorChoy, Wallace CHen_HK
dc.date.accessioned2007-03-23T04:35:58Z-
dc.date.available2007-03-23T04:35:58Z-
dc.date.issued1995en_HK
dc.identifier.citationIeee Photonics Technology Letters, 1995, v. 7 n. 8, p. 881-883en_HK
dc.identifier.issn1041-1135en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42981-
dc.description.abstractThe electric field induced refractive index change and absorption coefficient change in TE polarization are analyzed at room temperature for several interdiffusion modified Al0.3Ga0.7As-GaAs quantum-well structures. The results show that for the small and medium interdiffusion lengths with fields of 100 and 50 kV/cm, respectively, improved chirping and electroabsorption can be obtained. Further, in a selected set of interdiffusion lengths and fields, the material can be used for an electroabsorption modulator with reduced chirping in a wide range of operation wavelengths (758-874 nm).en_HK
dc.format.extent375142 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Photonics Technology Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleElectrooptic and electroabsorptive modulation properties in interdiffusion-modified AlGaAs-GaAs quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1041-1135&volume=7&issue=8&spage=881&epage=883&date=1995&atitle=Electrooptic+and+electroabsorptive+modulation+properties+in+interdiffusion-modified+AlGaAs-GaAs+quantum+wellsen_HK
dc.identifier.emailChoy, Wallace CH:chchoy@eee.hku.hken_HK
dc.identifier.authorityChoy, Wallace CH=rp00218en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/68.404002en_HK
dc.identifier.scopuseid_2-s2.0-0029359339en_HK
dc.identifier.hkuros9348-
dc.identifier.volume7en_HK
dc.identifier.issue8en_HK
dc.identifier.spage881en_HK
dc.identifier.epage883en_HK
dc.identifier.isiWOS:A1995RP03800020-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, EHerbert=7201410087en_HK
dc.identifier.scopusauthoridChoy, Wallace CH=7006202371en_HK

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