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Article: Electroabsorption enhancement in disordered, strained InGaAs/GaAs quantum well

TitleElectroabsorption enhancement in disordered, strained InGaAs/GaAs quantum well
Authors
KeywordsPhysics engineering
Issue Date1995
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1995, v. 67 n. 19, p. 2768-2770 How to Cite?
AbstractThe results of modeling the application of an external electric field to disordered, strained InGaAs/GaAs single quantum well are presented. An error function profile is used to model the constituent atoms composition after interdiffusion. Results indicate that the exciton Stark shift in the disordered quantum well is greater than in the as-grown 10 nm wide In0.2Ga0.8As well, and that the change in electroabsorption near the fundamental exciton absorption peak is enhanced by 30% in the disordered quantum well for a 30 kV/cm electric field applied perpendicular to the well. These results may be used to achieve optical modulators with improved performance characteristics in strained quantum well structures. © 1995 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42980
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMicallef, Jen_HK
dc.contributor.authorLi, EHen_HK
dc.contributor.authorWeiss, BLen_HK
dc.date.accessioned2007-03-23T04:35:57Z-
dc.date.available2007-03-23T04:35:57Z-
dc.date.issued1995en_HK
dc.identifier.citationApplied Physics Letters, 1995, v. 67 n. 19, p. 2768-2770en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42980-
dc.description.abstractThe results of modeling the application of an external electric field to disordered, strained InGaAs/GaAs single quantum well are presented. An error function profile is used to model the constituent atoms composition after interdiffusion. Results indicate that the exciton Stark shift in the disordered quantum well is greater than in the as-grown 10 nm wide In0.2Ga0.8As well, and that the change in electroabsorption near the fundamental exciton absorption peak is enhanced by 30% in the disordered quantum well for a 30 kV/cm electric field applied perpendicular to the well. These results may be used to achieve optical modulators with improved performance characteristics in strained quantum well structures. © 1995 American Institute of Physics.en_HK
dc.format.extent76888 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleElectroabsorption enhancement in disordered, strained InGaAs/GaAs quantum wellen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=67&issue=19&spage=2768&epage=2770&date=1995&atitle=Electroabsorption+enhancement+in+disordered,+strained+InGaAs/GaAs+quantum+wellen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.114587-
dc.identifier.scopuseid_2-s2.0-0029638097-
dc.identifier.hkuros9345-
dc.identifier.isiWOS:A1995TC98500006-

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