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Article: Temperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine

TitleTemperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2003, v. 94 n. 5, p. 2962-2967 How to Cite?
AbstractA GaInP/AlGaInP multiple quantum well laser structure was grown by low-pressure metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine. Laser diodes fabricated from this structure lased at room temperature. Photoluminescence ~PL! measurements were performed from 10 to 230 K. The PL energy increased with temperature from 10 to 70 K and decreased above 70 K. The former was attributed to thermal activation of trapped carriers due to localization in the quantum wells, while the latter was attributed to temperature-induced band-gap shrinkage. The PL intensity as a function of temperature was fitted by employing two nonradiative recombination mechanisms with good agreement, resulting in two activation energies that correspond to losses of photogenerated carriers to nonradiative centers. © 2003 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42953
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, CYen_HK
dc.contributor.authorYuan, Sen_HK
dc.contributor.authorDong, JRen_HK
dc.contributor.authorChua, SJen_HK
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorWang, SZen_HK
dc.date.accessioned2007-03-23T04:35:23Z-
dc.date.available2007-03-23T04:35:23Z-
dc.date.issued2003en_HK
dc.identifier.citationJournal of Applied Physics, 2003, v. 94 n. 5, p. 2962-2967en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42953-
dc.description.abstractA GaInP/AlGaInP multiple quantum well laser structure was grown by low-pressure metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine. Laser diodes fabricated from this structure lased at room temperature. Photoluminescence ~PL! measurements were performed from 10 to 230 K. The PL energy increased with temperature from 10 to 70 K and decreased above 70 K. The former was attributed to thermal activation of trapped carriers due to localization in the quantum wells, while the latter was attributed to temperature-induced band-gap shrinkage. The PL intensity as a function of temperature was fitted by employing two nonradiative recombination mechanisms with good agreement, resulting in two activation energies that correspond to losses of photogenerated carriers to nonradiative centers. © 2003 American Institute of Physics.en_HK
dc.format.extent76226 bytes-
dc.format.extent25600 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleTemperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphineen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=94&issue=5&spage=2962&epage=2967&date=2003&atitle=Temperature-dependent+photoluminescence+of+GaInP/AlGaInP+multiple+quantum+well+laser+structure+grown+by+metalorganic+chemical+vapor+deposition+with+tertiarybutylarsine+and+tertiarybutylphosphineen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1597977en_HK
dc.identifier.scopuseid_2-s2.0-0141522825-
dc.identifier.hkuros89882-
dc.identifier.isiWOS:000184844200025-

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